Vertical Superjunction Metal Oxide Field Effect Transistor

Abstract

The invention discloses a longitudinal super junction metal oxide field effect transistor, which comprises an N type doped semiconductor substrate and an N type doped epitaxial layer formed in sequence from bottom to top, wherein a first P type filling trap area and second P type filling trap areas with the same structures are formed inside the N type doped epitaxial layer from inside to outside; the upper side of the first P type filling trap area is provided with a first P type doped area; a second P type doped area and a P type doped unipotential ring are arranged on the upper side of each second P type filling trap area from inside to outside, and a terminal voltage-resistant structural area T is formed by the three parts; the second P type doped areas are arranged corresponding to the second P type filling trap areas; the P type doped unipotential rings are larger than the second P type filling trap areas in widths, and are correspondingly arranged in parallel over the second P type filling trap areas respectively along the length direction of the transistor; an N type doped area is arranged in each P type doped area, and constructs a primitive cell source electrode area C with the first P type filling trap area. By adopting the transistor, the surface potential distribution is optimized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a high-voltage power device, in particular to a vertical superjunction metal oxide field effect transistor. Background technique [0002] Traditional high-voltage power metal oxide semiconductor field effect transistor devices use a low-doped epitaxial drift layer as a voltage support layer, and its on-resistance is mainly the resistance of the drift layer. The withstand voltage capability of the drift layer is determined by its thickness and doping concentration. Therefore, in order to increase the breakdown voltage, it is necessary to increase the thickness of the drift layer and reduce its doping concentration at the same time. This causes the resistance of the drift layer to increase continuously. In the on state (especially at high voltage), the resistance of the drift layer accounts for most of the on resistance. [0003] The super junction metal oxide f...

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Problems solved by technology

However, in the prior art, due to the uneven distribution of the surface potential of the terminal structure of the super-junction metal oxide effect transistor, the surface leakage phenomenon is prone to occur on the surface of the terminal withstand voltage structure, and at the same time, it will cause the aggregation of mobile ions, which makes the withstand voltage of the device decline

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