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A Method of Epitaxial Growth Avoiding Fragmentation of Large-scale Epitaxial Wafers

A technology of epitaxial growth and growth method, applied in the field of III-nitride material preparation, can solve problems such as splits, the influence of epitaxial wafer quality, product scrap, etc., to reduce warpage, reduce warpage effect, and avoid excessive warpage Effect

Active Publication Date: 2016-11-16
宁波安芯美半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If warping is severe, it can easily cause splits during epitaxial growth
Epitaxial wafer shards will seriously affect the quality of the entire epitaxial wafer, and directly cause the product to be scrapped

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] An epitaxial growth method for avoiding large-scale epitaxial wafer fragments, the specific growth method is: in high-purity hydrogen (H 2 ) is the carrier gas environment, after the substrate is hydrogenated at high temperature, the optimized AlxGa1-xN (0.2<x<0.8) buffer layer is first grown, the Al component is 50%, the growth time is 5min, and the growth temperature is controlled at 580°C. The pressure is 600 Torr, and the Ⅴ / Ⅲ ratio is 500; after that, the nAlGaN / nGaN superlattice structure is mainly grown, and the nAlGaN layer in the superlattice structure is grown at a temperature of 1200°C, a growth time of 3min, and a pressure of 500Torr. The Ⅲ ratio is 1500, the Al composition in nAlGaN is 50%, the Al composition adopts gradient growth, including the Al composition increasing or the Al composition decreasing, the cycle number of the superlattice structure is 20, and the loop number can also adjust the growth The stress generated during the process; the thickness...

Embodiment 2

[0039] An epitaxial growth method for avoiding large-scale epitaxial wafer fragments, the specific growth method is: in high-purity hydrogen (H 2 ) is the carrier gas environment, after the substrate is hydrogenated at high temperature, the optimized AlxGa1-xN (0.2<x<0.8) buffer layer is first grown, the Al composition is 45%, the growth time is 4min, and the growth temperature is controlled at 560°C. The pressure is 500 Torr, and the Ⅴ / Ⅲ ratio is 400; after that, the nAlGaN / nGaN superlattice structure is mainly grown, and the nAlGaN layer in the superlattice structure is grown at a temperature of 1000°C, a growth time of 2in, and a pressure of 400Torr. The Ⅲ ratio is 1500, the Al composition in nAlGaN is 50%, and the Al composition adopts gradient growth, including increasing Al composition or decreasing Al composition, and the cycle number of the superlattice structure is 15, and the loop number can also adjust the growth The stress generated during the process; the thicknes...

Embodiment 3

[0042] An epitaxial growth method for avoiding large-scale epitaxial wafer fragments, the specific growth method is: in high-purity hydrogen (H 2 ) is the carrier gas environment, after the substrate is hydrogenated at high temperature, the optimized AlxGa1-xN (0.2<x<0.8) buffer layer is first grown, the Al component is 35%, the growth time is 3min, and the growth temperature is controlled at 540°C. The pressure is 400 Torr, and the Ⅴ / Ⅲ ratio is 450; after that, the nAlGaN / nGaN superlattice structure is mainly grown, and the nAlGaN layer in the superlattice structure is grown at a temperature of 1050°C, and the growth time is 2in. The pressure is 400Torr, and the Ⅴ / Ⅲ The Ⅲ ratio is 1200, the Al composition in nAlGaN is 40%, and the Al composition adopts gradient growth, including increasing Al composition or decreasing Al composition, and the cycle number of the superlattice structure is 18, and the loop number can also adjust the growth The stress generated during the process...

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PUM

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Abstract

The invention provides an epitaxial growth method capable of preventing a large-size epitaxial wafer from cracking. The epitaxial growth method specifically comprises the following steps of (1) firstly growing an optimized AlxGa(1-x)N (x is greater than 0.2 and is less than 0.8) buffer layer after a substrate is subjected to high-temperature hydrogenation, wherein the component of Al is 10%-60%, the growth time is 1-6 minutes, the growth temperature is 500-580 DEG C, the pressure is 100-600 Torr, and a V / III ratio is 10-500; (2) growing an optimized nAlGaN layer by adopting a superlattice; (3) carrying out matching processing on Al doping contents in the optimized AlxGa(1-x)N (x is greater than 0.2 and is less than 0.8) buffer layer and a superlattice structure of the optimized nAlGaN layer, thus adjusting the stress generated during a growth process and reducing the warping generated in the growth process of the large-size epitaxial wafer. According to the epitaxial growth method provided by the invention, by adopting the optimized growth buffer layer and combining the optimized nAlGaN layer, the warping effect of a four-inch or six-inch epitaxial wafer can be effectively reduced, thus the stress in the growth process of the epitaxial wafer can be lessened, and the cracking loss caused by overlarge warping of the large-size epitaxial wafer can be finally avoided.

Description

technical field [0001] The invention relates to the technical field of preparation of Group III nitride materials, in particular to an epitaxial growth method for avoiding large-scale epitaxial slice fragments. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. LEDs are entering the field of backlighting and lighting for LCD TVs. Greater market development opportunities depend on reducing the cost per lumen, which can be achieved by using larger-sized sapphire substrates for epitaxial growth. [0003] At present, 2-inch epitaxial wafers are the absolute mainstream in the domestic market, because the cost of 2-inch epitaxial wafers is lower and the technology is easier to master. In MOCVD equipment, the use of larger-sized epitaxial wafers, such as 4 inches or 6 inches, can incr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/12
CPCC30B29/406H01L33/007
Inventor 郭丽彬李刚
Owner 宁波安芯美半导体有限公司