A kind of organic electroluminescence device and preparation method thereof
An electroluminescent device, an organic metal technology, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as limiting the selection of cathode materials, and achieve the effect of low driving voltage and high efficiency
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Embodiment 1
[0036] ITO(150nm) / NPB(50nm) / Alq 3 (50nm) / Bebq 2 (15nm):Alq 3 (100%): Li 3 N(100%) / Al(150nm)
[0037] Among them, the anode is ITO; the material of the hole transport layer is NPB, the thickness is 50nm; the material of the organic light-emitting layer is Alq 3, with a thickness of 50nm; the material constituting the electron transport layer is Bebq 2 , and doped with Alq 3 (organometallic complex) and Li 3 N (alkali metal nitride), the total thickness of the electron transport layer is 45nm, Alq 3 and Li 3 N relative to Bebq 2 Calculated as molar ratio respectively, namely Bebq 2 、Alq 3 , Li 3 The molar ratio between the three materials of N is 1:1:1; the cathode material is Al, and the thickness is 150nm.
[0038] The preparation method of the organic electroluminescent device of this embodiment is as follows:
[0039] 1) Etch and fix the anode pattern on the ITO substrate according to the design;
[0040] 2) Clean the etched ITO glass substrate with a fixed pat...
Embodiment 2
[0046] Prepare the following device according to the preparation method of the organic electroluminescent device of Example 1:
[0047] ITO(150nm) / NPB(50nm) / Alq 3 (50nm) / Bphen(15nm):Alq 3 (100%): Li 3 N(100%) / Al(150nm)
[0048] Among them, the anode is ITO (indium tin oxide); the material of the hole transport layer is NPB with a thickness of 50nm; the material of the organic light-emitting layer is Alq 3 , with a thickness of 50nm; the material constituting the electron transport layer is Bphen, and doped with Alq 3 (organometallic complex) and Li 3 N (alkali metal nitride), the thickness of the electron transport layer is 45nm, Alq 3 and Li 3 N relative to Bebq 2 Calculated as molar ratio respectively, namely Bphen, Alq 3 , Li 3 The molar ratio between the three materials of N is 1:1:1; the cathode material is Al, and the thickness is 150nm.
Embodiment 3
[0050] ITO(150nm) / NPB(50nm) / Alq 3 (50nm) / Bphen(15nm):Alq 3 (100%): KBH 4 (50%) / Al(150nm)
[0051] Among them, the anode is ITO (indium tin oxide); the material of the hole transport layer is NPB with a thickness of 50nm; the material of the organic light-emitting layer is Alq 3 , with a thickness of 50nm; the material constituting the electron transport layer is Bphen, and doped with Alq 3 (organometallic complex) and KBH 4 (alkali metal borohydride), the thickness of the electron transport layer is 35nm, Alq 3 and Li 3 N relative to Bebq 2 Calculated as molar ratio % respectively, that is, Bphen and Alq 3 , Li 3 The molar ratio between the three materials of N is 1:1:0.5; the cathode material is Al, and the thickness is 150nm.
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