Terahertz photoelectric detector

A photodetector and terahertz technology, applied in the field of terahertz wave detection, can solve the problems that Siblometer cannot detect frequency and lack, and achieve the effect of terahertz broadband detection

Active Publication Date: 2014-04-09
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

These detectors have their own weaknesses. For example, quantum well detectors can only work in <40K environments, and Si blometers cannot detect specific frequencies.
Therefore, there is a lack of a detector that can work at room temperature and dynamically adjust the peak position of the detection frequency in the terahertz band.

Method used

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Embodiment Construction

[0028] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0029] Please refer to attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitra...

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Abstract

The invention provides a terahertz photoelectric detector. The terahertz photoelectric detector at least comprises a substrate with the surface covered with a medium layer, single-layer graphene formed on the surface of the medium layer, first metal electrodes arranged at the two ends of the single-layer graphene and a second metal electrode formed on the back face of the substrate. A current source for measuring the voltage change is arranged between the first metal electrodes, and a voltage source for providing the bias voltage is arranged between the second metal electrode and the first metal electrode at one end of the single-layer graphene. The photoconductive characteristic peak position of the single-layer graphene is modulated by adjusting the bias voltage, and therefore the terahertz frequency is detected.

Description

technical field [0001] The invention relates to the technical field of terahertz wave detection, in particular to a terahertz photodetector, in particular to a photodetector for detecting terahertz waves by utilizing the photoconductive properties of graphene. Background technique [0002] The terahertz band is an undeveloped band between the mid-infrared and microwaves in the spectrum, and is called the "terahertz gap". It has great scientific significance and application prospects in physics, material science, life science, astronomy, information and national defense technology. Due to the important academic significance and application value of the terahertz band, in recent years, terahertz physics, devices and applications have become one of the most popular frontier research fields in the world. [0003] Graphene is a new type of two-dimensional material due to its unique properties, including thinnest, strongest, high thermal conductivity, high hardness, high electron...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/08
CPCH01L31/08
Inventor 王丰曹俊诚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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