Broadband terahertz wave detector

A detector and terahertz technology, applied in the field of terahertz wave detection, can solve problems such as narrow detection bandwidth, achieve the effect of reducing area and solving narrow detection bandwidth

Pending Publication Date: 2019-10-29
SHENYANG INST OF AUTOMATION - CHINESE ACAD OF SCI
View PDF10 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the deficiencies of the prior art, the present invention provides a broadband terahertz wave detector to solve the problem of narrow detection bandwidth of the existing CMOS terahertz wave detector

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Broadband terahertz wave detector
  • Broadband terahertz wave detector
  • Broadband terahertz wave detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] like figure 2 Shown is a schematic diagram of Embodiment 1 of the connection between the antenna and the field effect transistor of the present invention.

[0036] The first port 6 drawn from the antenna 5 is connected to the source of the field effect transistor 8; the second port 7 drawn from the antenna is grounded or connected to a fixed bias voltage to provide a DC path for the field effect transistor 8, and the field effect transistor A fixed DC bias voltage is applied to the gate of FET 8, and the drain of field effect transistor 8 is used for outputting signals.

Embodiment 2

[0038] like image 3 Shown is a schematic diagram of Embodiment 2 of the connection between the antenna and the field effect transistor of the present invention.

[0039] Each of the two ports drawn by the antenna 9 is connected to a field effect transistor, that is, the first port 10 of the antenna 9 is connected to the source of a field effect transistor 12; the second port 11 drawn by the antenna 9 is connected to another field The source of the effect transistor 13; the gates of the two field effect transistors 12 and 13 are connected and loaded with a fixed DC bias voltage; the drains of the two field effect transistors 12 and 13 are connected for outputting detection signals; The position 14 of the neutral line is grounded or loaded with a fixed bias voltage, which is used to provide a direct current path for the field effect transistor.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a broadband terahertz wave detector that comprises a plurality of terahertz wave detectors with different center frequencies, wherein each terahertz wave detector comprises anantenna and a field effect transistor; the antenna adopts a nested structure, the terahertz wave detector with the high center frequency is placed on the inner side of the terahertz wave detector with the low center frequency, and output signals of the plurality of terahertz wave detectors with different center frequencies are added to serve as output detection signals. The output signals of theplurality of terahertz wave detectors with different center frequencies are added to serve as the output detection signals, so that broadband detection is achieved, and the problem that an existing CMOS terahertz wave detector is narrow in detection bandwidth is solved; the loop antenna can realize the nested structure, so that the area of the whole broadband terahertz wave detector is reduced; the field effect transistor has a direct-current path by grounding the loop antenna or connecting a fixed bias voltage, so that an extra lead is not needed to provide the bias voltage for a source electrode of the field effect transistor.

Description

technical field [0001] The invention relates to the technical field of terahertz wave detection, in particular to a broadband terahertz wave detector. Background technique [0002] Terahertz (THz) waves generally refer to electromagnetic waves with a frequency in the range of 0.1-10 THz and a wavelength between millimeter waves and far infrared. Terahertz waves have many unique characteristics, which make them widely used in security inspection, imaging, astronomical observation, biomedicine, non-destructive testing, radar, communication and many other fields. The terahertz wave detector is the basic module for researching terahertz wave technology. Due to the characteristics of small size and easy large-scale integration of complementary metal-oxide-semiconductor (CMOS) technology, CMOS terahertz wave detectors have been widely studied in recent years. However, most of the existing research work on CMOS terahertz wave detectors only realizes narrow-band detection, which c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42
CPCG01J1/4228
Inventor 刘朝阳汪业龙祁峰
Owner SHENYANG INST OF AUTOMATION - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap