Method for preparing monocrystalline silicon/cuprous iodide body heterojunction thin film by using gas-solid in-situ reaction under room temperature
A bulk heterojunction and cuprous iodide technology, applied in the direction of sustainable manufacturing/processing, electrical components, semiconductor devices, etc., can solve problems such as high energy consumption and complex equipment, achieve low energy consumption, convenient operation, and realize large-scale Effect of area controllable preparation
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Embodiment 1
[0044] Wipe the n-type single crystal silicon wafer with (100) plane orientation (length 1.0cm, width 0.5cm, thickness 0.20-0.40mm, resistivity 0.015-0.019Ω·cm) with acetone for 1min, rinse with deionized water for 1min Ultrasonic cleaning in absolute ethanol for 10 min, and soaked in absolute ethanol for use. Prepare 75 mL of potassium hydroxide solution with a mass fraction of 3.0% in a beaker, and then add 10 mL of isopropanol dropwise to make a mixed solution. Place the monocrystalline silicon wafer flat on the bottom of the beaker containing the mixed solution, heat it at 90°C for 40 minutes, then take it out and rinse it with deionized water for 1 minute, then soak it in the HF solution with a volume ratio of 1:50 for 30 seconds, take it out Then rinse with deionized water and dry at 70° C. to obtain a surface-treated n-type single crystal silicon wafer.
[0045] The surface-treated monocrystalline silicon wafer was tested by scanning electron microscope, and the scanni...
Embodiment 2
[0048] The surface of the n-type single crystal silicon wafer was treated by the same method as in the first embodiment to obtain a surface-treated n-type single crystal silicon wafer for future use.
[0049] Use DC magnetron sputtering technology to sputter a single copper metal film with a thickness of 200nm on the above-mentioned single crystal silicon substrate, and control the thickness of the copper layer by film thickness monitoring (FTM), and then put the obtained copper-clad single crystal silicon wafer into the cloth React in a sealed sample tube saturated with iodine vapor at 25°C for 20 minutes, and obtain a gray-black n-Si / p-CuI bulk heterojunction film on the surface of a single crystal silicon wafer, transfer it to a clean sample tube to avoid light, and store in a dry place , the iodine vapor is obtained by adding 0.15g iodine elemental substance into the sample tube and sublimating at room temperature, and the copper-clad n-type single crystal silicon wafer is ...
Embodiment 3
[0052] The surface of the n-type single crystal silicon wafer was treated by the same method as in the first embodiment to obtain a surface-treated n-type single crystal silicon wafer for future use.
[0053] Use DC magnetron sputtering technology to sputter a single copper metal film with a thickness of 200nm on the above-mentioned single crystal silicon substrate, and control the thickness of the copper layer by film thickness monitoring (FTM), and then put the obtained copper-clad single crystal silicon wafer into the cloth React at room temperature (25°C) for 25 minutes in a sealed sample tube saturated with iodine vapor, and obtain a gray-black n-Si / p-CuI bulk heterojunction film on the surface of the single crystal silicon wafer, transfer it to a clean sample tube to avoid light , dry storage, the saturated iodine vapor is obtained by adding 0.15g iodine elemental substance to sublimation at room temperature in a sample tube (the volume of the sample tube is about 7 milli...
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