Contact electrode structure for flat-plate crimped IGBT (Insulated Gate Bipolar Translator) module
An electrode structure, flat-plate technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve problems such as no technical solutions provided
Inactive Publication Date: 2014-05-21
XIAN YONGDIAN ELECTRIC
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Problems solved by technology
Since the flat-type IGBT module is connected in the form of crimping, the module does not use the conventional electrode lead-out design. The entire surface of the upper plate is the emitter, and the entire surface of the lower plate is the collector. The flat-type crimping IGBT module is in normal use. In the process, the voltage needs to be applied through the control pole, so how to lead out the control pole of the module is a key issue, and the existing technology does not provide a technical solution for this design
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[0021] The invention discloses a contact electrode structure for a flat plate crimping IGBT module. The IGBT module includes a chip, a DBC, an upper electrode plate, a lower electrode plate, a circuit board, and a housing. The upper electrode plate is the emitter and the lower electrode plate is the collector. The electrode; the circuit board is in contact with the upper end surface of the electrode connection terminal, the electrode connection terminal is in the shape of an arch, and a through hole is provided on the outer surface, and the electrode connection terminal is fixed on the housing through the through hole to complete the external Electrical connection between electrical leads and IGBT module.
[0022] Preferably, two electrode connection terminals are provided on the IGBT module, and the module control pole G pole and E pole are led out respectively.
[0023] Preferably, the electrode connection terminal is fixed on the housing by a fastening nut and a fastening screw ...
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The invention discloses a contact electrode structure for a flat-plate crimped IGBT (Insulated Gate Bipolar Translator) module. The IGBT module comprises a chip, a DBC (Direct Bond Copper), an upper polar plate, a lower polar plate, a circuit board and a shell, wherein the upper polar plate is a transmitter; the lower polar plate is a collector; the circuit board is contacted with the upper end face of an electrode connecting terminal; the electrode connecting terminal is arch-shaped, the outer side face is provided with a through hole, and the electrode connecting terminal is fixed to the shell through the through hole in order to complete electrical connection of an external electric lead with the IGBT module. By adopting the technical scheme, the leading-out problem of a control electrode of the flat-plate crimped IGBT module is solved, leading out of an IGBT control pole inside the flat-plate crimped IGBT module can be finished effectively, and electrical connection of the IGBT module is finished.
Description
Technical field [0001] The present invention relates to the technical field of semiconductor devices, in particular to a contact electrode structure used for the control electrode extraction of a flat plate crimping IGBT module. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), which also has MOSFET The advantages of high input impedance and GTR (power transistor) low on-voltage drop. The saturation voltage of GTR is reduced, the current-carrying density is high, but the drive current is large; the MOSFET drive power is small, the switching speed is fast, but the conduction voltage drop is large, and the current-carrying density is small. IGBT combines the advantages of the above two devices, with low driving power and reduced saturation voltage. It is very suitab...
Claims
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IPC IPC(8): H01L23/48
CPCH01L2924/0002H01L2924/00
Inventor 李先亮
Owner XIAN YONGDIAN ELECTRIC