Anti-single event upset and anti-single event transient settable reset scanning structure D trigger

Abstract

The invention discloses an anti-single event upset and anti-single event transient settable reset scanning structure D trigger, for the purpose of solving the problems of not high anti-single event upset capability and not high anti-single event transient capability. The settable reset scanning structure D trigger provided by the invention is composed of a buffer circuit, a scanning control buffer circuit, a setting buffer circuit, a reset buffer circuit, a clock circuit, a master latch register, a slave latch register and an output buffer circuit. The master latch register and the slave latch register are latch registers with redundancy reinforcement. The master latch register and the slave latch register are connected in series and are both connected with the clock circuit, the setting buffer circuit and the rest buffer circuit. The master latch register is also connected with the buffer circuit and the scanning control buffer circuit. The slave latch register is also connected with the output buffer circuit. According to the invention, mutually redundant C<2>MOS circuits are separated from the master latch register and the slave latch register so that the anti-single event upset capability is improved. The buffer circuit enables no errors to be generated under a single event transient pulse which lasts for quite a long time. A dual-mode redundancy pathway further enhances the anti-single event upset capability.

Description

technical field [0001] The present invention relates to a master-slave D flip-flop with a set and reset structure and a scan structure, in particular to an anti-single event upset (Single Event Upset, SEU) and anti-single event transient (Single Event Transient, SET) Set and reset scan structure D flip flops. Background technique [0002] There are a large number of high-energy particles (protons, electrons, heavy ions, etc.) in the universe. After the sequential circuit in the integrated circuit is bombarded by these high-energy particles, the state it maintains may be reversed. This effect is called the single event reversal effect. The higher the LET (Linear Energy Transfer) value of the bombardment IC, the easier it is to produce single event upset effects. After the combined circuit in the integrated circuit is bombarded by these high-energy particles, it is possible to generate a transient electric pulse. This effect is called the single event transient effect. The hi...

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Problems solved by technology

[0011] The technical problem to be solved by the present invention is to propose an anti-single

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