Semiconductor device and manufacturing method thereof

Abstract

Provided are a semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device comprises a semiconductor substrate, a gate dielectric layer arranged on the semiconductor substrate, a grid electrode arranged on the gate dielectric layer and an oxidation layer at least arranged on the side wall of the grid electrode, the gate dielectric layer is made of oxynitride, and the oxidation layer is made of silicon oxynitride. The manufacturing method of the semiconductor device comprises the steps that the semiconductor substrate is provided; the gate dielectric layer made of oxynitride materials is formed on the semiconductor substrate; a polysilicon gate is formed on the gate dielectric layer; the oxidation layer made of silicon oxynitride materials is at least formed on the side wall of the polysilicon gate. The dielectric constant of the gate dielectric layer can be prevented from deviating, and the performance of the semiconductor device is improved at last.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] The main device of integrated circuits, especially ultra-large-scale integrated circuits, is metal-oxide-semiconductor field effect transistors (MOS transistors). The key performance index of MOS transistors is the drive current. The magnitude of the drive current depends on the gate capacitance, and the gate capacitance and The gate surface area is directly proportional to the thickness of the gate dielectric layer, and is proportional to the dielectric constant of the gate dielectric layer. The thickness of the gate dielectric layer should not be too small, otherwise impurities such as boron ions doped in the gate will diffuse from the gate into the semiconductor substrate or be fixed in the gate dielectric layer, thereby affecting the threshold voltage of the device. W...

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Problems solved by technology

[0009] However, the dielectric constant of the gate dielectric layer 20 of the above-mentioned semiconductor device is prone to shift (shift), and correspondingly, the threshold voltage will also shift, which ultimately affects the performance of the semiconductor device

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