Optoelectronic device and method for manufacturing the same

Abstract

A method of fabricating an optoelectronic device comprising, providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a semiconductor epitaxial stack on the first major surface including a first conductive-type semiconductor layer having a first doping concentration, an active layer, and a second conductive-type semiconductor layer wherein the semiconductor epitaxial stack having four boundaries and a geometric center; and forming a plurality of the hollow components in the first conductive-type semiconductor layer wherein the plurality of the hollow components is formed from the boundary of the semiconductor epitaxial stack to the geometric center of the semiconductor epitaxial stack.

Description

technical field [0001] The invention relates to a photoelectric element with a plurality of hole structures in a semiconductor stack. Background technique [0002] The light-emitting diode (light-emitting diode, LED) uses the energy difference between n-type semiconductors and p-type semiconductors to release energy in the form of light. This light-emitting principle is different from that of incandescent lamps. Principle, so light-emitting diodes are called cold light sources. In addition, light-emitting diodes have the advantages of high durability, long life, light weight, and low power consumption. Therefore, today's lighting market has high expectations for light-emitting diodes, which are regarded as a new generation of lighting tools, which have gradually replaced traditional light sources. In various fields, such as traffic signs, backlight modules, street lighting, medical equipment, etc. [0003] figure 1 It is a schematic diagram of a known light-emitting eleme...

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Problems solved by technology

[0005] However, if figure 1 As shown, in the known light-emitting element 100, since the surface of the transparent substrate 10 is a flat surface, and the refractive index of the transparent substrate 10 is different from that of the external environment, the light A emitted by the active layer 122 enters from the substrate In the external environment, it is easy to form total internal reflection (Total Internal Reflection, TIR), which reduces the light extraction efficiency of the light emitting element 100

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