Hall sensor

A Hall sensor and sensor technology, which is applied in the direction of magnetic sensor arrays, instruments, and electric power measurement by using electromagnetic effect devices, can solve the problems of limiting the accuracy of Hall sensors, reduce residual bias voltage, improve accuracy, The effect of reducing the electric field

Active Publication Date: 2014-06-18
AMS AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, relative to the sensitivity of the Hall sensor, if the described method is used, there is still a residual bias voltage greater than the voltage caused by the earth's magnetic field
The residual bias voltage thus limits the accuracy of the Hall sensor

Method used

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Experimental program
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Embodiment Construction

[0084] FIG. 1 shows different embodiments of a Hall sensor with several Hall sensor elements 11 , 12 , 21 , 22 which are interconnected and in this way together form a larger Hall sensor. . Figure 1A An embodiment with a lateral Hall sensor element is shown, while Figure 1B A vertical Hall sensor element is used in the exist Figure 1A with Figure 1B In the two embodiments illustrated in the Hall sensor elements 11, 12, 21, 22 respectively comprise four element terminals or element terminals A, B, C, D, some of which are connected to adjacent Hall sensor element, and some of the element terminals are connected to external terminals or sensor terminals EXT_A, EXT_B, EXT_C, EXT_D. The circuit is implemented similarly in both embodiments, so that the following description of the circuit can be applied to Figure 1A with Figure 1B .

[0085] In the Hall sensor, the element terminals A of the Hall sensor elements 11 , 12 are commonly connected to the sensor terminal EXT_...

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Abstract

A Hall sensor has at least three Hall sensor elements (1, 2,..., 94) which each have at least three element connections (A, B, C, D, E, F, G, H) and are connected in a circuit grid having a structure which is more than one-dimensional, and at least three sensor connections (EXT_A, EXT_B, EXT_C, EXT_D) for making contact with the Hall sensor. In this case, each sensor connection (EXT_A, EXT_B, EXT_C, EXT_D) is connected to at least one of the Hall sensor elements (1, 2,..., 94) at one of the element connections (A, B, C, D, E, F, G, H) thereof.

Description

technical field [0001] The invention relates to a Hall sensor with several Hall sensor elements arranged on a semiconductor body. Background technique [0002] The Hall effect, named after American physicist Edwin Herbert Hall (1855-1938), occurs when a magnetic field perpendicular to the current is present. In this case, the magnetic field produces a potential difference called Hall voltage in a direction extending perpendicular to the direction of the magnetic field and perpendicular to the direction of the current flow. The measurement of the Hall voltage enables the determination of the magnitudes of the components of the magnetic field. [0003] Hall sensors for measuring Hall voltages may be implemented in the form of semiconductor devices. The evaluation circuit can also be integrated into the semiconductor component and can be produced, for example, during a CMOS process. If the plane of the active region in which the operating current flows and in which the Hall ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/07G01R33/00
CPCG01R33/0094G01R33/07G01R21/08G01R33/072
Inventor 乔治·勒雷尔
Owner AMS AG
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