Local random point contact solar cell with back electrode and preparing method thereof

A technology for solar cells and back electrodes, applied in the field of solar cells, can solve the problems of surface passivation and electrode contact of silicon solar cells, and achieve the effects of being beneficial to mass production, increasing short-circuit current and open-circuit voltage, and improving long-wave response.

Inactive Publication Date: 2014-07-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a solar cell with localized random point contact on the back electrode and its preparation method to solve the

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  • Local random point contact solar cell with back electrode and preparing method thereof
  • Local random point contact solar cell with back electrode and preparing method thereof

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Embodiment Construction

[0028] First, the realization principle of the present invention is briefly described

[0029] The method for forming the electrode local point contact structure provided by the present invention is to deposit Al on the silicon surface 2 o 3 film, because the film contains a large number of mobile hydrogen atoms, hydrogen atoms will combine to form hydrogen gas during the annealing process, so from Al 2 o 3 escapes from the film, making the Al 2 o 3 Blistering occurs in the film. A round hole will naturally be left at the foaming place, and there is no Al in this round hole. 2 o 3 The silicon surface is exposed by covering with the film. When there is electrode metal covered to Al 2 o 3 When it is on the film, a part of the metal will fall into the hole and contact with the silicon, so as to realize the electrode local point contact model of the silicon material with surface passivation.

[0030] Based on the above realization principles, the present invention propos...

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Abstract

The invention provides a local random point contact solar cell with a back electrode and a preparing method of the local random point contact solar cell with the back electrode. The local random point contact solar cell with the back electrode comprises a substrate, an n-type emitting electrode manufactured on the substrate, a front surface passivation layer manufactured on the n-type emitting electrode, a passivation film, a plurality of front grid line electrodes and the whole back electrode. The front surface passivation layer is divided into a plurality of sections and an electrode window is arranged between every two adjacent sections; the passivation film is manufactured on the lower side of the substrate and a plurality of small holes are formed in the passivation film; the front grid line electrodes are manufactured on the electrode windows on the front surface passivation layer and are in contact with the n-type emitting electrode; the whole back electrode is manufactured on the passivation film and is in contact with the substrate through the small holes in the passivation film. The local random point contact solar cell with the back electrode can solve the problem that surface passivation of the silicon solar cell contradicts electrode contact and improves the long wave response and the cell efficiency of the silicon solar cell.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell with localized random point contacts on a back electrode and a preparation method thereof. Background technique [0002] Silicon solar cells are currently the largest and most widely used semiconductor battery products. The conversion efficiency of commercial monocrystalline silicon solar cells has reached about 18.5%, and polycrystalline silicon cells can also reach about 17.8%. Due to the limitations of the current cell production process and device structure, it has become very difficult to improve cell efficiency. In order to further improve battery efficiency, a variety of new structural batteries have been developed, such as metal-wrapped (MWT), emitter-wrapped (EWT), back-junction back-contact (BCBJ), and new processes have been developed. Such as secondary printed electrodes, electroplating, chemical etching surface texture, selective emitter, back surfa...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/0216H01L31/04H01L31/18
CPCY02E10/50H01L31/02167H01L31/022441H01L31/0682H01L31/1804H01L31/1868Y02E10/546Y02E10/547Y02P70/50
Inventor 梁鹏韩培德范玉洁邢宇鹏
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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