Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of the polycrystalline silicon solar cell of rie texture

A solar cell and polysilicon technology, applied in the field of solar cells, can solve the problems of increasing process operating costs, increasing the damage rate of silicon wafers, and increasing operating costs, so as to improve photoelectric conversion efficiency, avoid silicon wafer damage, and reduce silicon wafer loss Effect

Active Publication Date: 2016-09-14
CSI CELLS CO LTD +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Obviously, compared with the traditional polysilicon solar cell manufacturing process, the RIE textured polysilicon solar cell manufacturing process has the following disadvantages: (1) The removal of wire-cut damage layer and RIE damage layer removal and post-cleaning process steps are added , thereby increasing the operating cost of the process accordingly; (2) The use of chemical corrosion leads to a large amount of chemicals used, and the treatment of expensive chemical waste liquid and the storage and operation of large volumes of acid and alkali will also greatly increase the operating costs of the enterprise; (3) Repeated chemical solution treatment increases the brittleness of silicon wafers that are thinner and thinner in order to save costs. In addition, more transfers between processes will increase the breakage rate of silicon wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Taking P-type polysilicon as an example, a method for preparing a polysilicon solar cell made of RIE texturing comprises the following steps:

[0027] (1) Put the original polysilicon wafer into the carrier plate by the robot, and enter the process chamber 1 through the loading chamber of the plasma equipment for plasma dry etching, and the gas is NF 3 , the etching time is 10 min, and the etching thickness is 4 microns; then, the silicon wafer on the carrier plate is transported to the process chamber 2 by rollers for RIE texturing, and the gas is SF 6 / O 2 / Cl 2 Mixed gas, the texturing time is 10 min, the reflectance after texturing is 7%, and the silicon wafer after RIE texturing is obtained;

[0028] (2) Put the above-mentioned RIE-textured silicon wafers into the chain-type wet chemical equipment by manipulators, with the RIE-textured surface of the silicon wafers facing up, and firstly enter the back etching and polishing tank through the roller transmission, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
reflectanceaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a polycrystalline silicon solar cell by RIE texturing. The method comprises the following steps that (1) plasma dry etching is used for removing a front surface damage layer of a polycrystalline silicon chip, and then RIE texturing is conducted; (2) a chained wet chemical processing method is used for sequentially conducting back face etching polishing, RIE damage layer removing and post cleaning processing on the silicon chip; (3) the texturing surface of the silicon chip is subjected to phosphorus source diffusion in a back-to-back chip inserting mode; (4) the diffused silicon chip is subjected to wet etching, surface PSG is removed, and then a passivation antireflection film is deposited on the front surface of the silicon chip; (5) back silver and aluminium paste are printed on the back face of the silicon chip and then are dried; then front silver is printed on the front surface of the silicon chip and then is sintered, and accordingly the polycrystalline silicon solar cell can be obtained. According to the method, the technology steps can be reduced, the using amount of chemicals is also reduced simultaneously, and the operation cost of an enterprise is greatly lowered.

Description

technical field [0001] The invention relates to a method for preparing a RIE textured polycrystalline silicon solar cell, which belongs to the technical field of solar cells. Background technique [0002] Conventional fossil fuels are increasingly depleted. Among the existing sustainable energy sources, solar energy is a safe, reliable, affordable and easy-to-obtain green energy. Therefore, solar cell modules have received more and more attention, and high conversion efficiency and low cost are the main trends in the development of solar cells and the goals pursued by technology researchers. In order to obtain higher photoelectric conversion efficiency, in addition to the high quality of the crystalline silicon material itself and the ability to form ideal PN junctions and other inherent characteristics, it is also necessary to have a good light trapping effect on the surface of the cell. The light-trapping effect is usually achieved by surface texturing, which is an import...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 邹帅王栩生
Owner CSI CELLS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products