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Crystal growth device and crystal manufacturing method

A manufacturing method, crystal growth technology, applied in crystal growth, chemical instruments and methods, during the use of growth, the seed crystal remains in the molten liquid, etc., can solve problems such as dislocation, affecting crystal quality, etc., to reduce thermal stress concentration and improve crystal Quality, improve the effect of the adjustable interval

Inactive Publication Date: 2014-07-09
SINO AMERICAN SILICON PROD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thermal stress generated by the above temperature gradient eventually leads to dislocation and affects the crystal quality

Method used

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  • Crystal growth device and crystal manufacturing method
  • Crystal growth device and crystal manufacturing method
  • Crystal growth device and crystal manufacturing method

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Embodiment Construction

[0044] The invention relates to a crystal growth device and a crystal manufacturing method. First, a brief description of the crystal growth device used in the crystal manufacturing method will be given, and then the crystal manufacturing method will be introduced.

[0045] see Figure 1A and Figure 1B As shown, it is an embodiment of the present invention. This embodiment provides a crystal growth device 100, comprising: a crucible 1, a crucible cover 2, a heat insulation unit 3, a plurality of heat reflection rings 4 and a Hanging unit 5. Wherein, the above-mentioned crucible 1 is an appliance commonly used in the industry, so it will not be described in detail here.

[0046] An opening 21 is defined in a substantially central portion of the crucible cover 2 , and a plurality of through holes 22 are formed in a portion of the crucible cover 2 adjacent to the opening 21 . The crucible cover 2 is installed on the crucible 1 , so that the crucible 1 and the crucible cover 2...

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PUM

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Abstract

A crystal growth device comprises a crucible, a crucible cover and a plurality of heat reflecting rings, wherein an opening is formed in the crucible cover which is mounted on the crucible, and the crucible cover and the crucible commonly surround to define accommodating space communicated with outside through the opening; the plurality of heat reflection rings are arranged in the accommodating space and suspended on the crucible cover; every two adjacent heat reflection rings are arranged at equidistant intervals; and a first angle is formed between each heat reflection ring and the crucible cover. The plurality of heat reflection rings can deform during the heating process of the crystal device, so that each first angle is changed into a second angle. Therefore, the crystal growth device can adjust temperature gradient distribution of molten liquid surface through the arrangement of the plurality of the heat reflection rings.

Description

technical field [0001] The present invention relates to a crystal growing device and a crystal manufacturing method, and in particular to a crystal growing device and a crystal manufacturing method capable of adjusting the temperature gradient distribution on the surface of a molten soup in a crucible. Background technique [0002] In order to manufacture sapphire wafers, typically, a crystal growth device filled with high-purity alumina raw material is heated to or above 2100 degrees Celsius to melt the raw material, and then undergoes a series of procedures such as drilling, circular grinding, slicing, grinding, Heat treatment and polishing to obtain single crystal wafers. [0003] When manufacturing sapphire single crystals, controlling air bubbles and controlling dislocations have a significant impact on quality. Dislocations can be measured by etching methods after crystal growth. Dislocations are mainly caused by thermal stress, and thermal stress is mainly caused by...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B17/00C30B29/20
Inventor 吕建兴宋永萱陈智勇刘哲铭游惠乔徐文庆陈志臣
Owner SINO AMERICAN SILICON PROD
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