Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Insulated Gate Bipolar Transistor

A technology of bipolar transistors and insulated gates, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems that insulated gate bipolar transistors cannot meet the on-voltage drop and off-time at the same time, and achieve the improvement of injection efficiency , low forward conduction voltage drop, and improved off-time effect

Inactive Publication Date: 2017-01-04
SHAOXING UNIVERSITY
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention provides a fast turn-off insulated gate bipolar transistor in order to overcome the inability of the existing insulated gate bipolar transistors to simultaneously meet the requirements of turn-on voltage drop and turn-off time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Insulated Gate Bipolar Transistor
  • Insulated Gate Bipolar Transistor
  • Insulated Gate Bipolar Transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] figure 1 Shown is a schematic cross-sectional structure diagram of a conventional insulated gate bipolar transistor. figure 2 Shown is a schematic cross-sectional structure diagram of an anode-short-circuited insulated gate bipolar transistor; image 3 Shown is a schematic cross-sectional structure diagram of an IGBT provided by an embodiment of the present invention. Figure 4 Shown is a comparison simulation diagram of forward conduction voltage drop and turn-off time of an IGBT provided by an embodiment of the present invention and a traditional IGBT. Please also refer to Figure 1 to Figure 4 .

[0026] Such as image 3 As shown, the IGBT provided in this embodiment includes: a first base region 101, a second base region 102, an emitter region 103, a gate oxide layer 104, a buffer region 105, a first collector region 106, a second The second collector region 107 and the third collector region 108 . The second base region 102 is disposed on one side of the fir...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an insulated gate bipolar transistor, comprising a first base region, a second base region, an emitter region, a gate oxide layer, a buffer region, a first collector region, a second collector region and a third collector region . Wherein, the second base region, the emitter region and the gate oxide layer are sequentially arranged on one side of the first base region, and the buffer zone, the first collector region, the second collector region and the third collector region are sequentially arranged on the first the other side of the base. And the conductivity type of the second base region, the first collector region and the second collector region is opposite to that of the first base region, while the conductivity type of the emitter region, the buffer region and the third collector region are the same as those of the third collector region. The conductivity types of the first base regions are the same. The maximum thickness of the third collector region is equal to the maximum thickness of the second collector region, and the doping concentration of the buffer zone, the first collector region and the third collector region gradually increases to form a bipolar transistor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, and in particular to an insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a semiconductor power device that develops rapidly and is widely used. It is a semiconductor power device that combines the gate voltage control characteristics of metal oxide semiconductor field effect transistors (MOSFET) and the low on-resistance characteristics of bipolar junction transistors (BJT). It has the characteristics of voltage control, high input impedance, simple drive circuit, small on-resistance, high current density, low switching loss and high operating frequency. It is used in energy conversion devices such as induction cooker, electric welding machine, uninterruptible power supply, frequency converter, and motor drive. Has a wide range of applications. [0003] Insulated gate bipolar transistors are originally pun...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/08H01L29/06
CPCH01L29/0821H01L29/36H01L29/7393
Inventor 王春早马海平张斌
Owner SHAOXING UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com