The invention provides an insulated gate bipolar transistor, comprising a first base region, a second base region, an emitter region, a gate oxide layer, a buffer region, a first collector region, a second collector region and a third collector region . Wherein, the second base region, the emitter region and the gate oxide layer are sequentially arranged on one side of the first base region, and the buffer zone, the first collector region, the second collector region and the third collector region are sequentially arranged on the first the other side of the base. And the conductivity type of the second base region, the first collector region and the second collector region is opposite to that of the first base region, while the conductivity type of the emitter region, the buffer region and the third collector region are the same as those of the third collector region. The conductivity types of the first base regions are the same. The maximum thickness of the third collector region is equal to the maximum thickness of the second collector region, and the doping concentration of the buffer zone, the first collector region and the third collector region gradually increases to form a bipolar transistor structure.