The invention provides an insulated gate bipolar transistor. The insulated gate bipolar transistor comprises a first base region, a second base region, an emitter region, a gate oxide layer, a buffer region, a first collector electrode area, a second collector electrode area and a third collector electrode area. The second base region, the emitter region and the gate oxide layer are sequentially arranged on one side of the first base region, and the buffer region, the first collector electrode area, the second collector electrode area and the third collector electrode area are sequentially arranged on the other side of the first base region. The conduction type of the second base region, the conduction type of the first collector electrode area and the conduction type of the second collector electrode area are opposite to the conduction type of the first base region. The conduction type of the emitter region, the conduction type of the buffer region and the conduction type of the third collector electrode area are the same as the conduction type of the first base region. The maximum thickness of the third collector electrode area is equal to the maximum thickness of the second collector electrode area, and the dosage concentration of the buffer region, the dosage concentration of the first collector electrode area and the dosage concentration of the third collector electrode area are gradually increased, so that a bipolar transistor structure is formed.