The invention discloses a
trench gate type insulated gate bipolar translator (IGBT) with a double-face
diffusion residual layer and a manufacturing method thereof. The IGBT comprises an N-type base region, a P-type base region, a back P+ collector region, an N+ emitter region, a P+ emitter region, a
gate oxide layer, an emitter, a gate
electrode and a collector. The N-type base region is composed of an N+
diffusion residual layer, an N- drift region and an N+ buffer layer, wherein the N-type
diffusion residual layer, the N- drift region and the N+ buffer layer are stacked up in sequence. The P-type base region is located on the N+ diffusion residual layer.
Doping concentration gradually increases outwards from a boundary of the N- drift region with the N+ diffusion residual layer and the N+ buffer layer. The manufacturing method of the IGBT is characterized in that the non-uniform doped N+
layers are formed on the front face and the back face through one-time double-face high temperature deep junction diffusion at the same time, the N+ diffusion residual layer is formed on the front face of the N- drift region, so that the
ion doping concentration of the N-type front face is improved, and a
conductivity modulation effect is strengthened. The N+ buffer region on the back face can reduce breakover
voltage drop of a device, and the turn-
off time of the device is prolonged. The manufacturing method can reduce the steps of manufacturing the IGBT, and reduce the cost.