IGBT power device for low power application and method of manufacturing the same

Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Translator) power device applied at low power and a manufacturing method thereof. The method comprises the following steps: performing semiconductor impurity injection or diffusion operation on the front side of a silicon substrate; performing corroding treatment on the front side which is subjected to the semiconductor impurity injection or diffusion operation; performing P type ion injection on the back side of the silicon substrate to form a P region; forming a groove on the back side of the silicon substrate; performing N type ion injection on the surface of the groove to form an N region; performing diffusion operation on the P region and the N region; performing an outer layer encapsulating treatment on the silicon substrate. The method has the advantages that by means of groove formation, P type ion injection and N type ion injection on the surface of the groove under the condition of not influencing the voltage endurance capability of the device, the switch-on / off time of a low-voltage IGBT can be prolonged respectively, extremely low startup voltage drop and rapid reverse switch-off recovery are realized.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor power electronic device manufacturing, and in particular, relates to a method for manufacturing an IGBT power device for low-power applications. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is a composite device of a bipolar transistor and a power MOSFET. Its structure can be equivalent to a combination of one MOS and two bipolar transistors. In normal operation, Bottom P + Connected to positive potential, called the anode of IGBT, surface N - The contact layer is usually connected to a negative or zero potential, which is called the cathode of the IGBT, and the electrode drawn through the gate dielectric is the gate of the IGBT. Because of its characteristics are significantly better than bipolar transistors and power MOSFETs, IGBTs have been widely used in motor control, industrial speed regulation, household appliances, lighting, network communications, computers, aut...

AI Technical Summary

Problems solved by technology

In low-power applications, the advantages of power MOSFETs are more obvious. Its fast channel current turn-on and turn-off characteristics make it a better match for low-voltage high-frequency circuits, but if the IGBT can also have the above-mentioned fast turn-on and turn-off characteristics of MOSFETs If so, it will trigger a revolution in semiconductor devices

Images