A trench gate type igbt with double-sided diffusion residual layer and its manufacturing method

Abstract

The invention discloses a trench gate type insulated gate bipolar translator (IGBT) with a double-face diffusion residual layer and a manufacturing method thereof. The IGBT comprises an N-type base region, a P-type base region, a back P+ collector region, an N+ emitter region, a P+ emitter region, a gate oxide layer, an emitter, a gate electrode and a collector. The N-type base region is composed of an N+ diffusion residual layer, an N- drift region and an N+ buffer layer, wherein the N-type diffusion residual layer, the N- drift region and the N+ buffer layer are stacked up in sequence. The P-type base region is located on the N+ diffusion residual layer. Doping concentration gradually increases outwards from a boundary of the N- drift region with the N+ diffusion residual layer and the N+ buffer layer. The manufacturing method of the IGBT is characterized in that the non-uniform doped N+ layers are formed on the front face and the back face through one-time double-face high temperature deep junction diffusion at the same time, the N+ diffusion residual layer is formed on the front face of the N- drift region, so that the ion doping concentration of the N-type front face is improved, and a conductivity modulation effect is strengthened. The N+ buffer region on the back face can reduce breakover voltage drop of a device, and the turn-off time of the device is prolonged. The manufacturing method can reduce the steps of manufacturing the IGBT, and reduce the cost.

Description

technical field

[0001] The invention relates to the field of semiconductor power devices and manufacturing, in particular to a trench gate type IGBT structure with double-sided diffusion residual layers and a manufacturing method thereof. Background technique

[0002] IGBT is an insulated gate bipolar transistor (InsulatedGateBipolarTransistor, referred to as IGBT) is a combination of metal oxide semiconductor field effect transistor (MOSFET) gate voltage control characteristics and bipolar junction transistor (BJT) low on-resistance characteristics in All-in-one semiconductor power devices. With the characteristics of voltage control, large input impedance, low driving power, small on-resistance, low switching loss and high operating frequency, it is an ideal semiconductor power switching device with broad development and application prospects.

[0003] According to whether there is a high-concentration buffer layer of the same concentration type as the drift region betwee...

Images