Hybrid integrated IGBT (insulated gate bipolar translator) drive circuit

A hybrid integration and driving circuit technology, applied in electrical components, output power conversion devices, etc., can solve the problems of low circuit reliability, high circuit cost, fluctuation of external power supply, etc., to reduce the soft-off time and increase the soft-off time. off-time effect

Inactive Publication Date: 2013-02-06
SHENYANG CHUANGDA TECH TRADE MARKET
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional IGBT integrated driver chip needs an external power supply for power supply, the circuit cost is high, the structure is complex, and the

Method used

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  • Hybrid integrated IGBT (insulated gate bipolar translator) drive circuit

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Embodiment Construction

[0009] The detailed structure of the present invention is illustrated in conjunction with examples.

[0010] The hybrid integrated IGBT drive circuit as figure 1 as shown,

[0011] The hybrid integrated IGBT drive chip is QP12W05S-37(A), and the regulator tube is DZ402 and DZ403.

[0012] The external signal is input to the hybrid integrated driver chip after being limited by the resistor, and the driver chip outputs a stable voltage signal to drive the IGBT on and off. The circuit has the function of limiting the output signal to ensure that the signal received by the IGBT gate is within its safe range. At the same time, the system can detect the current at both ends of the IGBT. When the current value exceeds the limit value, the drive circuit blocks the output and sends an error signal to ensure the safety of the IGBT. In order to reduce the high voltage spike generated at the collector when the IGBT is turned off, the gate resistance can be appropriately increased. At ...

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PUM

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Abstract

The invention discloses a hybrid integrated IGBT (insulated gate bipolar translator) drive circuit and belongs to the technical field of drive of a power device. The circuit comprises a hybrid integrated IGBT drive chip and a voltage stabilizing tube; the hybrid integrated IGBT drive chip selects QP12W05S-37(A); the voltage stabilizing tube selects DZ402 and DZ403; the voltage stabilizing tube is connected with the hybrid integrated IGBT drive chip; an external signal is input to the hybrid integrated drive chip after being limited by a resistor; the hybrid integrated drive chip outputs stable voltage signal to drive on/off of the IGBT; the circuit has the function of outputting the signal and limiting the amplitude, so that the signal received by the grid of the IGBT is within a safe range, and current at two ends of the IGBT is detected at the same time. The drive circuit locks, outputs and emits an error signal to ensure the safety of the IGBT when the current value exceeds a limit value. The hybrid integrated IGBT drive circuit has the advantages that the drive circuit has a power supply, and has the functions of blocking and restoring a fault, and adjusting protective soft turn-off time.

Description

[0001] technical field [0002] The invention belongs to the technical field of driving power devices, in particular to a hybrid integrated IGBT driving circuit. Background technique [0003] IGBT (Isolated gate bipolar transistor), that is, the insulated gate bipolar transistor has the characteristics of superior low saturation voltage drop, high voltage and large current output, and has been widely used and paid attention to in power electronics related industries. . In order to make the IGBT play a more stable and safe performance in the high-power system, it is necessary to design a special driving circuit. The traditional IGBT integrated driver chip needs an external power supply, the circuit cost is high, the structure is complex, and the external power supply fluctuates, causing the entire circuit to fail, the reliability of the circuit is low, and the workload of troubleshooting is heavy. Contents of the invention [0004] Aiming at the deficiencies in the prior...

Claims

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Application Information

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IPC IPC(8): H02M1/08
Inventor 李翠
Owner SHENYANG CHUANGDA TECH TRADE MARKET
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