Insulated gate bipolar transistor (IGBT) protection circuit and motor control system

A bipolar transistor and protection circuit technology, applied in emergency protection circuit devices, electrical components, etc., can solve the problems of high current change rate of insulated gate bipolar transistors, easy damage of IGBTs, etc., to protect from damage and increase shutdown. time, the effect of reducing the rate of change of current
CN101752841AActive Publication Date: 2010-06-23BYD CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BYD CO LTD
Publication Date
2010-06-23

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Abstract

The invention provides an insulated gate bipolar transistor (IGBT) protection circuit and a motor control system, belonging to the filed of the motor control. The IGBT protection circuit comprises a sampling circuit, a feeding back circuit, a driving circuit and a slow turn-off circuit. The IGBT protection circuit adopts the slow turn-off circuit, thus the turn-off time of the IGBT is prolonged, the current change rate is reduced and the IGBT is protected against damage when the IGBT carries out the over-current protection.
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Description

technical field

[0001] The invention belongs to the field of motor control, in particular to an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) protection circuit and a motor control system. Background technique

[0002] When a high-power insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is working, a short-circuit overcurrent is caused by a motor stall or an overcurrent is caused by a series connection between the upper and lower bridge IGBTs. The overcurrent protection circuit in the prior art generally adopts a hardware Shutdown, once an excessive current is detected, the IGBT will be turned off immediately. When the protection circuit immediately executes the shutdown, it will cause a high rate of change of the IGBT current, resulting in a high voltage. These spikes may exceed the withstand voltage of the IGBT range, damage the IGBT. Contents of the invention

[0003] The purpose of the embodiments of the present i...

Claims

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