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Insulated gate bipolar transistor (IGBT) protection circuit and motor control system

A bipolar transistor and protection circuit technology, applied in emergency protection circuit devices, electrical components, etc., can solve the problems of high current change rate of insulated gate bipolar transistors, easy damage of IGBTs, etc., to protect from damage and increase shutdown. time, the effect of reducing the rate of change of current

Active Publication Date: 2010-06-23
BYD CO LTD
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  • Summary
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AI Technical Summary

Problems solved by technology

[0003] The purpose of the embodiments of the present invention is to provide a protection circuit for an IGBT, which aims to solve the problem that the IGBT is easily damaged due to the high rate of change of the current of the IGBT due to the hard turn-off method in the prior art.

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  • Insulated gate bipolar transistor (IGBT) protection circuit and motor control system
  • Insulated gate bipolar transistor (IGBT) protection circuit and motor control system
  • Insulated gate bipolar transistor (IGBT) protection circuit and motor control system

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Embodiment Construction

[0015] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0016] The IGBT protection circuit provided by the embodiment of the present invention adopts a slow turn-off circuit, so that when the IGBT is under overcurrent protection, the turn-off time of the IGBT is increased, the rate of change of current is reduced, and the IGBT is protected from damage.

[0017] The IGBT protection circuit provided by the embodiment of the present invention is mainly used in the motor control system of electric vehicles or hybrid vehicles, and its module structure is as follows: figure 1 As shown, for ease of description, only the parts related to the embodiment of the p...

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Abstract

The invention provides an insulated gate bipolar transistor (IGBT) protection circuit and a motor control system, belonging to the filed of the motor control. The IGBT protection circuit comprises a sampling circuit, a feeding back circuit, a driving circuit and a slow turn-off circuit. The IGBT protection circuit adopts the slow turn-off circuit, thus the turn-off time of the IGBT is prolonged, the current change rate is reduced and the IGBT is protected against damage when the IGBT carries out the over-current protection.

Description

technical field [0001] The invention belongs to the field of motor control, in particular to an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) protection circuit and a motor control system. Background technique [0002] When a high-power insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is working, a short-circuit overcurrent is caused by a motor stall or an overcurrent is caused by a series connection between the upper and lower bridge IGBTs. The overcurrent protection circuit in the prior art generally adopts a hardware Shutdown, once an excessive current is detected, the IGBT will be turned off immediately. When the protection circuit immediately executes the shutdown, it will cause a high rate of change of the IGBT current, resulting in a high voltage. These spikes may exceed the withstand voltage of the IGBT range, damage the IGBT. Contents of the invention [0003] The purpose of the embodiments of the present i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H7/122
Inventor 杨广明黄炳健
Owner BYD CO LTD
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