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Hard mask surface treatment

A surface treatment and hard mask technology, applied in photomechanical processing of originals, patterned surface photoengraving process, instruments, etc., can solve the problem that the pattern of the light blocking layer cannot be effectively prevented from collapsing.

Active Publication Date: 2018-07-27
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, treatment of oxymetal hardmasks with HMDS was not effective in preventing pattern collapse of subsequently applied photoblocks.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Example 1: Protected carboxylic acid surface treatment polymer (90 / 10 nBMA / tBA) was prepared as follows. A monomer / initiator-containing feed solution was prepared by adding the following components to a glass vial: 53.99 g n-butyl methacrylate (nBMA), 6.01 g tert-butyl acrylate (tBA), and 30.02 g 2-methacrylate base-1-butanol. Shake the vial gently to mix the contents, then place in an ice bath to allow temperature equilibration with the ice bath. Then, 1.80 g of dimethyl 2,2'-azobis(2-methylpropionate) initiator (available from Japan Wako Pure Chemical Industries, Ltd., trade name V-106) was added to the vial medium, then shake until the initiator is completely dissolved. The vials were then returned to the ice bath until time of use.

[0064] A 250 mL three-necked round bottom flask (equipped with thermocouple, condenser without cooling water circulation, and monomer / initiator feed tubes) containing a magnetic stir bar was placed in a heating mantle. The heating ...

Embodiment 2

[0066] Example 2 : Prepare protected carboxylic acid surface treatment polymer (90 / 10nBMA / 233tBA) according to the procedure of Example 1, the difference is to adopt 53.99g n-butyl methacrylate (nBMA), 6.01g acrylic acid 2,3, 3-Trimethyl-3-butyl ester (233 tMBA) and 30.01 g of 2-methyl-1-butanol were used to prepare the monomer / initiator feed solution. The polymer content in the resulting polymer solution was 37.2%.

Embodiment 3

[0067] Example 3 : Prepare the hydroxyl-containing surface treatment polymer (97 / 3nBMA / HEMA) according to the procedure of Example 1, the difference is to adopt 58.2g n-butyl methacrylate (nBMA), 1.878g hydroxyethyl methacrylate (HEBA) and 30.00 g 2-methyl-1-butanol to prepare a monomer / initiator feed solution. The polymer content in the obtained polymer solution was 37.5%.

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Abstract

Hard mask surface treatment. A composition is provided, comprising: an organometallic compound; a surface treatment polymer having a surface energy of 20-49erg / cm2, the surface treatment polymer comprising a group selected from hydroxyl, protected hydroxyl, protected carboxyl groups and their mixed surface-treating groups; and solvents.

Description

technical field [0001] The present invention mainly relates to the field of semiconductor manufacturing, and further relates to the field of hard masks used in semiconductor manufacturing. Background technique [0002] With the continued reduction of CD and pitch in 193nm immersion lithography, the use of hardmasks in specific layers of IC fabrication has become increasingly popular due to the excellent etch selectivity of hardmask materials. A specific metal hard mask, such as titanium nitride, is applied to the processed wafer by chemical vapor deposition (CVD). In conventional techniques for integrated circuit fabrication, an amorphous carbon hardmask and a silicon hardmask (or silicon anti-reflection layer or SiARC) are applied by CVD or spin coating techniques. Spin-on-metal hardmasks are now gaining traction in the integrated circuit industry, due in part to potential cost reductions and fabrication process simplifications compared to conventional methods. [0003] T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/11H01L21/027C08F220/18C08G79/00
CPCC08G77/58C09D183/14C09D133/064C09D133/066H01L21/0332C08K5/56C08K5/0091C08L33/066G03F1/00C08L33/064
Inventor D·王P·特雷福纳斯三世山田晋太郎K·M·奥康纳
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC