Driving electrode plate and capacitor upper electrode plate separating type RF MEMS switch

Abstract

The invention discloses a driving electrode plate and capacitor upper electrode plate separating type RF MEMS switch which comprises a substrate, a buffer dielectric layer, a ground wire, a coplanar waveguide transmission line, an anchor point, an insulating dielectric layer, elastic folding beams and an upper electrode. The ground wire, the coplanar waveguide transmission line and the anchor point are arranged on the buffer dielectric layer, the coplanar waveguide transmission line is covered with the insulating dielectric layer, a gap is reserved between the upper electrode and the insulating dielectric layer, the upper electrode is divided into a capacitor upper electrode plate and driving electrode plates located at the two ends of the capacitor upper electrode plate, the driving electrode plates are connected with the capacitor upper electrode plate through two sets of elastic folding beams in the bent shape of n with the bent number being one, and the driving electrode plates are connected with the anchor point through two sets of elastic folding beams in the bent shape of n with the bent number being two. According to the driving electrode plate and capacitor upper electrode plate separating type RF MEMS switch with the structure, the microbridge elastic coefficient is effectively reduced, so that the driving voltage of the capacitor type RF MEMS switch is reduced, and the driving voltage can be lower than 3 V.

Description

technical field [0001] The design relates to a separate RF MEMS switch with a driving electrode plate and a capacitor upper plate, which belongs to the field of radio frequency technology. Background technique [0002] RF MEMS switches usually use electrostatic drive technology, which has the advantages of low energy consumption (several microwatts), simple bias network, and short switching time (small electrode size, thin film layer), but there are also high drive voltages (30-80 V) and other shortcomings. The operating voltage of mobile communication equipment is generally much lower. For example, the operating voltage of a mobile phone is 3.3 V, and an up-converter needs to be added. In addition, the lifetime of the capacitive RF MEMS switch has a great relationship with the driving voltage. For every 5-7V drop in the driving voltage, the lifetime of the switch can be extended by 10 years. How to reduce the driving voltage is not only related to the material of the sw...

AI Technical Summary

Problems solved by technology

[0002] RF MEMS switches usually use electrostatic actuation technology, which has low power consumption (several microwatts), simple bias network, and short switching time (small electrode size, film layer Thin) and other advantages, but there are also disadvantages such as high driving voltage (30-80 V)

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