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Method of Changing Light Field Distribution in Bar Slow Axis Direction of Semiconductor Laser

A light field distribution and semiconductor technology, which is applied in the field of changing the light field distribution in the direction of the bar slow axis of a semiconductor laser, can solve the problems of complex structure and unfavorable miniaturization of semiconductor lasers, and achieve the effect of avoiding the complexity of the structure and improving the efficiency.

Active Publication Date: 2017-01-11
华芯半导体科技有限公司
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Problems solved by technology

However, for many special optical field distributions, it cannot be obtained only by beam shaping, and the use of beam shaping will inevitably make the structure of semiconductor lasers more complicated, which is not conducive to its miniaturization

Method used

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  • Method of Changing Light Field Distribution in Bar Slow Axis Direction of Semiconductor Laser
  • Method of Changing Light Field Distribution in Bar Slow Axis Direction of Semiconductor Laser
  • Method of Changing Light Field Distribution in Bar Slow Axis Direction of Semiconductor Laser

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Embodiment

[0027] In this embodiment, the light field in the slow axis direction of the semiconductor laser bar has a flat-top distribution as an example. Figure 1 to Figure 4 Describe it in detail.

[0028] The selection of the number of light-emitting units, bar widths 1, 1' and spacings 2, 2' of the semiconductor laser bar can be determined according to the final required power and fill factor, and the luminescence of the semiconductor laser bar is determined according to the power and fill factor. unit design.

[0029] Scheme 1: According to the embodiment of the present invention, a single bar is composed of five light-emitting units, and the structure of the semiconductor laser bar is as follows figure 1 shown.

[0030] The bar width 1 and spacing 2 of the light-emitting units of the semiconductor laser array bar are as follows from left to right:

[0031] Strip width 1: 100um, 150um, 120um, 130um, 100um

[0032] Spacing 2: 450um, 460um, 480um, 500um

[0033] After the light ...

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Abstract

A method for changing slow axis direction optical field distribution of semiconductor laser bars comprises the main steps of selecting semiconductor laser array devices with the bars with a plurality of different bar widths; sequentially arranging light-emitting unit bar widths in a certain mode for photoetching; selecting different intervals between the adjacent arranged array devices; according to the specific requirement, conducting photoetching on the bar widths and the intervals of the semiconductor laser array devices according the certain size, and distributing slow axis direction optical fields of the bars according to the specific requirement. According to the method, the slow axis direction optical field distribution is changed by directly starting with light sources of semiconductor lasers, the slow axis direction optical field distribution with the specific requirement can be achieved for the semiconductor laser bars, the laser cladding efficiency and cladding layer hardness are improved, structural complication is also avoided, and the semiconductor lasers can be widely applied.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a method for changing the light field distribution in the bar slow axis direction of a semiconductor laser. Background technique [0002] Due to its high photoelectric conversion efficiency, reliable working stability, compact size and simple driving requirements, semiconductor lasers are widely used in laser processing, military defense, medical and health and other fields. The mode of the slow axis direction of the semiconductor laser is relatively complex, and the light field distribution in this direction is an important characteristic of the semiconductor laser, which has important reference significance for the application of the semiconductor laser. Different application fields also have different requirements for the light field distribution of the slow axis. In recent years, the light field distribution in the slow axis direction of common semiconductor las...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/40
Inventor 王智勇尧舜贾冠男潘飞高祥宇李峙
Owner 华芯半导体科技有限公司
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