Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Data writing method, memory controller and memory storage device

A technology for memory controller and data writing, applied in the direction of memory address/allocation/relocation, etc.

Active Publication Date: 2014-08-13
PHISON ELECTRONICS
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the speed of writing data in the rewritable non-volatile memory module is already greater than the transmission speed of the transmission interface, the speed at which the host writes data can only be determined by the transmission speed of the transmission interface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data writing method, memory controller and memory storage device
  • Data writing method, memory controller and memory storage device
  • Data writing method, memory controller and memory storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0084] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit). Typically memory storage devices are used with a host system so that the host system can write data to or read data from the memory storage device.

[0085] Figure 1A is a schematic block diagram of a host system and a memory storage device shown in an exemplary embodiment.

[0086] Figure 1B is a schematic diagram of a computer, input / output devices, and memory storage devices shown in an exemplary embodiment.

[0087] Figure 1C It is a schematic diagram of a host system and a memory storage device shown in an exemplary embodiment.

[0088] Please refer to Figure 1A , the host system 1000 generally includes a computer 1100 and an input / output (input / output, I / O) device 1106 . The computer 1100 includes a microprocessor 1102 , a random access memory (random access memory, RAM) 1104 , ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a data writing method, a memory controller and a memory storage device. The method is used for controlling a rewritable nonvolatile memory module, which comprises two storage memory cells. The method comprises the following steps of: configuring a plurality of logical addresses to be mapped to at least part of entity erasing units in the two memory cells; receiving a writing command from a host system, which indicates that the data are written in one logical address; writing the data in one entity erasing unit in the two memory cells; judging which memory cell does the entity erasing unit belong to; if the entity erasing unit belongs to one memory cell, erasing one entity erasing unit in the other memory cell when the data are written in. therefore, the speed that the data are written in the memory storage device by the host system can be increased.

Description

technical field [0001] The present invention relates to a data writing method, and in particular to a data writing method for a rewritable non-volatile memory module, a memory controller and a memory storage device. Background technique [0002] Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Since the rewritable non-volatile memory module (for example, flash memory) has the characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable for being built into various portable multimedia devices listed above. device. [0003] Generally, the rewritable non-volatile memory module can be electrically connected to a host system through a transmission interface. The host system can write data to the rewritable non-volatile memory module through the transmission interface. Moreover, the rewritable non-volatile memory module inclu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F12/02
Inventor 黄意翔
Owner PHISON ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com