Manufacturing method of semi-floating gate memory and semi-floating gate memory

Abstract

The invention provides a manufacturing method of a semi-floating gate memory. The manufacturing method comprises the following steps: providing a substrate of a first doping type; generating a first semiconductor and a second semiconductor on the substrate, wherein the first semiconductor and the second semiconductor are opposite to the substrate in conductive type; and generating a tunneling layer and a barrier layer at the same time, wherein the tunneling layer is arranged on the substrate and adjacent to the first semiconductor in parallel, the second semiconductor covers the tunneling layer and the first semiconductor, the barrier layer covers the second semiconductor, and the tunneling layer and the barrier layer are generated at the same time so that the process steps are reduced, the process complexity is reduced, and the production efficiency is greatly improved. Besides, when a diode structure formed by the first semiconductor and the substrate is conducted, writing of data is accelerated, the rapid storage function of the data is achieved, and due to the diode structure and the tunneling layer, the storage time of the data is greatly prolonged. In addition, the invention also discloses the semi-floating gate memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor storage, in particular to a method for manufacturing a half-floating gate memory and the half-floating gate memory. Background technique [0002] Today's mainstream storage technology is divided into two categories: volatile storage technology and non-volatile storage technology. [0003] Among them, the volatile memory technologies are mainly static memory SRAM (Static Random-Access Memory) and dynamic random access memory DRAM (dynamic random access memory). Volatile memory has a nano-level write speed, but its data retention capability is only in milliseconds, so it can only be used in limited storage areas such as caches. [0004] For non-volatile storage technologies, such as flash memory technology, its data retention capability can reach 10 years, but relatively slow write operations greatly limit its application in the cache field. Therefore, in this context, a semi-floating gate m...

AI Technical Summary

Problems solved by technology

However, there is no disclosed method for manufacturing a half-floating gate memory, which reduces process steps, reduces process complexity, and manufactures a half-floating gate memory that speeds up data writing and increases data retention time

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