Bipolar semiconductor switch and method of manufacturing the same
A semiconductor, n-type semiconductor technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electronic switches, etc., can solve problems such as large device area and affecting turn-off
Active Publication Date: 2017-06-13
INFINEON TECH AG
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- Description
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- Application Information
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Problems solved by technology
However, a gate resistance that is too high for many applications may be required to affect the turn-off
Additionally, this design typically uses a large device area
Method used
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[0018] In the ensuing detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustrations specific embodiments in which the invention may be practiced. In this regard, directional terms such as "top", "bottom", "front", "back", "leading", "trailing", etc. are used with reference to the orientation of the figure(s) being described. Because components of an embodiment may be placed in many different orientations, directional terms are used for purposes of illustration and are in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the invention is defined by the appended claims.
[0019] Reference will now be made in detail to various embodiments, one or more examples of whic...
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The present invention relates to a bipolar semiconductor switch and a method of manufacturing the same. A bipolar semiconductor switch having a semiconductor body is provided. The semiconductor body includes a first p-type semiconductor region, a second p-type semiconductor region, and a first n-type semiconductor region. The first n-type semiconductor region forms a first pn junction with the first p-type semiconductor region and forms a first pn junction with the second p-type semiconductor region. region forms a second pn junction. On the shortest path between the first pn junction and the second pn junction through the first n-type semiconductor region, the concentration of charge recombination centers and the concentration of n dopants vary. The concentration of charge recombination centers has a maximum at a point along the shortest path where the concentration of n-dopants is at least close to the maximum dopant concentration. Additionally, a manufacturing method for a bipolar semiconductor switch is provided.
Description
technical field [0001] Embodiments of the present invention relate to bipolar semiconductor switches, in particular bipolar power semiconductor switches, and to related manufacturing methods. Background technique [0002] Semiconductor devices such as thyristors and transistors, e.g. field effect controlled switching devices such as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) or Insulated Gate Bipolar Transistors (IGBTs) have been used in a variety of applications including but not limited to power supplies and Switches in power converters, electric vehicles, air conditioners, and even stereo systems. Especially with regard to power devices capable of switching large currents and / or operating at higher voltages, low on-state resistance (which is subsequently referred to as on-resistance R on ), soft switching behavior (soft recovery), and high voltage blocking capability are often desired. The flexibility of a semiconductor component can be described in te...
Claims
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IPC IPC(8): H03K17/567H01L29/739H01L29/06
CPCH01L21/263H01L29/32H01L29/41766H01L29/42368H01L29/66348H01L29/0834H01L29/167H01L29/7397H01L29/66333H01L29/7393H01L21/221H01L21/265H01L21/266H01L29/41708
Inventor F.J.尼德诺斯泰德H-J.舒尔策
Owner INFINEON TECH AG