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Body Bias Switching Device

A body biasing and switching technology used in the circuit field

Active Publication Date: 2021-03-26
QORVO US INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Circuit elements accustomed to this design can be coupled with substrate noise, increased number of control lines for decoder circuits, spurious signals into radio frequency (RF) switch cores due to limitations in available routing paths, and relatively The large die size associated with

Method used

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  • Body Bias Switching Device
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Examples

Experimental program
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Effect test

Embodiment Construction

[0036] Various aspects of the exemplary embodiments will be described using terms commonly employed by those skilled in the art to convey the substance of their research to others skilled in the art. However, those skilled in the art will appreciate that alternative embodiments may be practiced with only some of the described aspects. For purposes of illustration, specific devices and configurations are set forth in order to provide a thorough understanding of the illustrative embodiments. However, it will be apparent to those skilled in the art that alternative embodiments may be practiced without these specific details. In other instances, well-known features were omitted or simplified in order not to obscure the exemplary embodiments.

[0037] Additionally, operations may be described in turn, as multiple discrete operations, in turn, in a manner that is most helpful in understanding the disclosure; however, the order of description should not be construed as to imply that...

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PUM

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Abstract

The invention provides a circuit, wireless communication device and method for switching RF Signals.The embodiment provides a switch device that contains one or more field effects transistors (FET).In the embodiment, the bias circuit can obtain the bias voltage based on the radio frequency signal applied to the switching field effect transistor and the bias voltage can be applied to the body terminal of the switching field effect.

Description

technical field [0001] Embodiments of the present disclosure relate generally to the field of circuits, and more particularly to body-biased switching devices utilizing field effect transistors ("FETs"). Background technique [0002] For silicon-on-insulator (SOI) switching devices, a negative body-bias connection is used to mitigate floating effects during cut-off mode operation. This design requires the use of a charge pump to supply the negative voltage directly to the body. Circuit elements accustomed to this design can be coupled with substrate noise, increased number of control lines for decoder circuits, spurious signals into radio frequency (RF) switch cores due to limitations in available routing paths, and relatively associated with large chip sizes. Contents of the invention [0003] The present invention provides a circuit for switching radio frequency RF signals, the circuit comprising: [0004] a field effect transistor FET comprising a source terminal, a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/687
CPCH03K17/162H03K2017/066H03K2217/0018H01L29/78H03K17/063
Inventor 威廉·J·克劳森小詹姆斯·P·富里诺迈克尔·D·约尔
Owner QORVO US INC