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Layer Removal Method for Small Size Samples

A small size, sample technology, applied in the field of semiconductor failure analysis, can solve the problems of surface scratches, difficult to control, low grinding efficiency, etc., to achieve the effect of improving success rate, uniform removal, and improving sample turnover

Active Publication Date: 2016-08-31
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a layer removal method for small-sized samples in view of the defects in the prior art that the small-sized samples are difficult to control during the delamination process, the surface scratches are serious, and the grinding efficiency is low. Improve the method of sample preparation, improve the flatness and uniformity of the surface of the sample after grinding, and then improve the success rate of sample preparation and work efficiency

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  • Layer Removal Method for Small Size Samples
  • Layer Removal Method for Small Size Samples
  • Layer Removal Method for Small Size Samples

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Embodiment Construction

[0020] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0021] Figure 3 to Figure 6 Each step of the method for removing layers of a small-sized sample according to a preferred embodiment of the present invention is schematically shown.

[0022] like Figure 3 to Figure 6 As shown, the method for removing the small-scale sample layer according to a preferred embodiment of the present invention includes:

[0023] The first step: first cut out a chip whose size is larger than the small-sized sample, and use it as the base chip 100; preferably, the size of each side of the base chip 100 is 5-25 times larger than the size of the corresponding side of the small-sized sample .

[0024] For example, the chip can be cut by manual splitting method; for example, the size of the chip is 1cm*1cm, and the siz...

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Abstract

The invention provides a graded removing method for small-size samples. The graded removing method comprises the following steps: cutting a chip, which is larger than the small-size samples, as a base chip; heating the base chip on a heater; coating the heated base chip with a hot melt adhesive; then sticking the small-size samples, which are aligned to one other, on the base chip by the hot melt adhesive, wherein the surfaces of the small-size samples are flat; after the base chip and the small-size samples are cooled, cleaning the surfaces of the small-size samples by a washing agent; grinding the surface, which is in contact with the small-size samples, of the base chip by a grinding disc until the surface of the base chip is as large as the sum of the small-size samples; thinning the bottom surface, which is opposite to the small-size samples, of the base chip by the grinding disc; and grinding the surfaces, which are opposite to the base chip, of the small-size samples to a target position.

Description

technical field [0001] The invention relates to the field of semiconductor failure analysis, and more specifically, the invention relates to a method for removing layers of small-sized samples. Background technique [0002] In the process of semiconductor failure analysis, when analyzing a specific point or a specific structure, it is often necessary to go to a specific location, and the surface needs to be even and flat. [0003] When performing dehierarchy analysis on a sample with a size not larger than 5mm*5mm, due to the small size of the sample, it is difficult to control the sample on the grinding disc during manual grinding. During the grinding process, it is often only possible to keep the sample along one Grinding in the same direction, so that the uniformity of the sample surface cannot be guaranteed; figure 1 As shown, the local area has exposed the active area, and some are still in the metal layer; and the surface of the sample will produce serious tensile mar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/28G01N1/32G01N1/34G01N1/44
Inventor 刘迪
Owner SHANGHAI HUALI MICROELECTRONICS CORP