Nanoscale three-state resistive random access memory and preparation method thereof

A three-state resistance and memory technology, applied in electrical components and other directions, can solve the problems of short holding time and poor switching performance of multi-resistance resistive devices, and achieve the effect of significant switching effect, good performance, and concentrated resistance cumulative probability distribution.
CN103996790AActive Publication Date: 2014-08-20HEBEI UNIVERSITY
3 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
HEBEI UNIVERSITY
Publication Date
2014-08-20

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a nanoscale three-state resistive random access memory. According to the nanoscale three-state resistive random access memory, an nc-Si:H film and an Ag electrode film are sequentially deposited on a Pt film layer of a Pt / Ti / SiO2 / Si substrate. The invention meanwhile discloses a preparation method of the nanoscale three-state resistive random access memory. The method specifically includes the steps of growing the nc-Si:H film on the Pt / Ti / SiO2 / Si substrate through a PECVD method, and growing an Ag electrode on the nc-Si:H film through a magnetron sputtering method. The nanoscale three-state resistive random access memory has long keeping time and good switching performance, and three resistance states keep stable for 2.3*105 seconds; the switching resistance value ratio of a high-resistance-state resistor to a middle-resistance-state resistor is larger than 102, the switching resistance value ratio of a middle-resistance-state resistor and a low-resistance-state resistor is larger than 105, and the obvious switching effect is achieved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a multi-state resistive memory device and a preparation process thereof, in particular to a nanoscale three-state resistive memory device and a preparation method thereof. Background technique

[0002] With the continuous reduction of device feature size and continuous improvement of integration, the traditional non-volatile FLASH memory based on charge storage can no longer meet the needs of the market. Researchers have carried out a lot of research work in the field of new storage technology and achieved great results Big progress, such as ferroelectric memory, phase change memory, magnetic memory, resistive change memory, etc. Among these new types of memory, resistive variable memory has become a strong competitor of the next generation of non-volatile memory due to its simple device structure, excellent scalability, fast read and write speed, and low power consumption. Widespread attention in the electronics industry. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More