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Large phase shift mask and manufacturing method of large phase shift mask

A technology of phase-shift mask and phase-shift film, which is applied in the field of photomask, can solve problems such as difficulty in exposure and transfer steps, and achieve the effect of reducing manufacturing costs

Active Publication Date: 2018-04-03
DAI NIPPON PRINTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in order to properly perform the subsequent etching process of the transferred body, it is necessary to adjust the exposure amount while finely adjusting the conditions in the developing process of the exposed resist, and preferably adjust the photoresist of the fine pattern region 83c. The remaining film value is the main reason for the difficulty of the exposure transfer step

Method used

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  • Large phase shift mask and manufacturing method of large phase shift mask
  • Large phase shift mask and manufacturing method of large phase shift mask
  • Large phase shift mask and manufacturing method of large phase shift mask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0185] Figure 4 (a) is a graph showing the results of obtaining changes in the exposure intensity distribution when the width W of the phase shift region is changed by exposure simulation. Figure 4 (b) is an enlarged representation Figure 4 The curve of the central part of the light intensity distribution of (a). Figure 4 (c) means for Figure 4 (a) Curves of the light intensity at the central portion and the height of the side peaks of each exposure intensity distribution according to changes in the width W of the phase shift region.

[0186] Figure 5 A graph comparing the exposure intensity distribution using the large phase shift mask of the present invention with the exposure intensity distribution using a binary mask of the same pattern using exposure simulation.

[0187] Figure 4 (a) takes the width W of the semi-transparent phase shift region as a parameter and uses the exposure simulation to use such as Figure 5 The light intensity distribution on the imag...

Embodiment 2

[0197] Figure 6 It is an explanatory diagram comparing the contrast enhancement effect of the exposure intensity distribution of the large phase shift mask of the present invention with that of a conventional binary mask. Figure 6 (a) is a plan view showing a line and space (L / S) pattern of a large phase shift mask of the present invention, (b) is a plan view showing a line and space pattern of a binary mask of the prior art, (c ) is a diagram comparing exposure intensity distributions on the imaging planes of the masks shown in (a) and (b).

[0198] In addition, Table 1 is a table comparing the contrast enhancement effect of the exposure intensity distribution of the large phase shift mask of this invention with the conventional binary mask.

[0199] Figure 6 (a) The pattern of the large-scale phase shift mask of the present invention is a line and space pattern with a pitch of 4 μm, the width W of the semitransparent phase shift region 3 is 1 μm, and the translucent pha...

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Abstract

The present invention provides a structure of a translucent phase shift mask suitable for forming a fine pattern in a large photomask used in the manufacture of a liquid crystal panel or an EL panel, and a method of manufacturing the same. Furthermore, there is provided a structure that suppresses the generation of side peaks that appear when a pattern is exposed using a translucent phase shift mask. In the pattern in which the transmissive regions are adjacently arranged on both sides of the translucent phase shift region formed on the transparent substrate, by setting the light transmittance of the semitransparent phase shift region in the range of 4% to 30%, the The width is set in the range of 1 μm to 5 μm, thereby achieving a structure that improves the contrast of the exposure intensity distribution while suppressing the generation of side peaks.

Description

technical field [0001] The invention relates to a photomask, in particular to a large photomask and a large photomask used in the manufacture of liquid crystal display devices, electroluminescent (EL, ElectroLuminescence) display devices, and other active matrix (active matrix) display devices. A method of manufacturing a photomask. Background technique [0002] The change in the specification of the photomask used in the manufacture of flat panel displays (abbreviated as FPD (Flat Panel Display)) is observed in thin TVs using liquid crystal display devices (LCD (abbreviated as Liquid Crystal Display)) Represented by the large-screen and high-definition that has been achieved. Regarding the enlargement of the screen, the size of the first-generation glass substrate used in production was around 1990 when the mass production of liquid crystal flat-screen TVs started, and it was used in the production of the fifth generation around 2002. The size of the first-generation glas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/32G03F7/20
CPCG03F1/32G03F1/26G03F1/54H01L21/027
Inventor 木下一树飞田敦二岛悟
Owner DAI NIPPON PRINTING CO LTD