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Method for determining mask pattern, non-transitory recording medium, and information processing apparatus

一种信息处理装置、掩模图案的技术，应用在确定掩模图案领域，能够解决分辨图案元素困难、图案元素分辨容易性变化等问题

Active Publication Date: 2014-08-27
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the mask is illuminated by an effective light source distribution, the ease of resolution of pattern elements may vary, and there may be difficulty in resolving some pattern elements

Method used

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  • Method for determining mask pattern, non-transitory recording medium, and information processing apparatus
  • Method for determining mask pattern, non-transitory recording medium, and information processing apparatus
  • Method for determining mask pattern, non-transitory recording medium, and information processing apparatus

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Embodiment Construction

[0020] The embodiment relates to a photolithography technique that can be used to manufacture devices such as semiconductor integrated circuits, liquid crystal panels, LEDs, and image sensors, and specifically, it can be possibly used to form masks for multiple exposures (such as double exposures) The pattern and the process of determining the exposure and irradiation conditions.

[0021] figure 1 It is a flowchart showing a method for determining a mask pattern (hereinafter also referred to as a pattern determination method). The method is implemented by reading and executing the program by the processing unit (such as CPU or MPU) in the computer. Software or programs that implement the functions of this embodiment are provided to an information processing device including one or more computers via a network or via a recording medium. The processing unit in the information processing device reads a recording medium or a program recorded or stored in a storage medium to execute ...

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PUM

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Abstract

A method which determines patterns for a plurality of masks to be executed by a processor includes acquiring data on a pattern containing a plurality of pattern elements, and assigning the acquired plurality of pattern elements into masks, decomposing the acquired plurality of pattern elements into patterns of the masks, and calculating an evaluation value for an evaluation index, based on a number of masks, the distances between a plurality of pattern elements in each mask, and an angle of a line connecting a plurality of pattern elements in each mask. In the method, a pattern of each mask is determined based on the calculated evaluation value.

Description

Technical field [0001] The present invention relates to a method for determining a mask pattern, a recording medium and an information processing device. Background technique [0002] In recent years, with the progress of miniaturization of semiconductor devices, it has been difficult to transfer a desired pattern onto a wafer with high precision by using an exposure device. One reason for this is the reduced half-pitch, which is half of the shortest distance between the patterns included in the circuit. [0003] In order to solve this problem, as a technique for transferring a minute pattern of, for example, a 22 nm node onto a wafer with high accuracy, multiple exposure patterning has attracted attention. This technique is used to divide a pattern with a half pitch smaller than the half pitch of the resolution limit of the exposure device into a plurality of mask patterns and expose them to use higher than in the case where the pattern is exposed once as in the past Transfer ti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36G03F7/20
CPCG03F1/84G03F7/70433G03F7/70466G03F1/70H01L21/0273
Inventor 中山谅行田裕一
Owner CANON KK