Unlock instant, AI-driven research and patent intelligence for your innovation.

led chip and its manufacturing method

An LED chip and manufacturing method technology, which is applied to electrical components, electrical solid-state devices, circuits, etc., can solve problems such as complicated processes, and achieve the effects of reducing the shading area, simplifying the packaging process, and improving reliability.

Active Publication Date: 2017-10-17
XIANGNENG HUALEI OPTOELECTRONICS
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to provide an LED chip and a manufacturing method thereof, so as to solve the problem in the prior art that the welding pads of multiple LED chips are wired.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • led chip and its manufacturing method
  • led chip and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] In this embodiment, a kind of LED chip is made, and the specific manufacturing process is as follows:

[0048] On a 2-inch substrate, 15 LED sub-chips to be fabricated are produced by yellow light, evaporation, and cleaning. These to-be-produced areas are divided into 3 columns from left to right, and each column includes 5 to-be-produced areas;

[0049]According to the front-mounting process, the P electrode and the N electrode to be fabricated area are formed on the above 15 LED sub-chips to be fabricated, and the electrode substrate is formed to be fabricated;

[0050] A mask layer covering the entire substrate is formed on the above-mentioned electrode substrate to be fabricated, and then the mask layer is patterned to expose the area to be fabricated of each P electrode and N electrode and the connection position of each electrode. According to the design, in the region where the above 15 LED sub-chips are to be fabricated, the first LED sub-chip in each column tog...

Embodiment 2

[0054] In this embodiment, a kind of LED chip is made, and the specific manufacturing process is as follows:

[0055] On a 2-inch substrate, 15 LED sub-chips to be fabricated are produced by yellow light, evaporation, and cleaning. These to-be-produced areas are divided into 3 columns from left to right, and each column includes 5 to-be-produced areas;

[0056] According to the flip-chip process, the P electrode and the N electrode to be produced area are formed on the above 15 LED sub-chips to be produced, and the electrode to be produced substrate is formed;

[0057] A mask layer covering the entire substrate is formed on the above-mentioned electrode substrate to be fabricated, and then the mask layer is patterned to expose the area to be fabricated of each P electrode and N electrode and the connection position of each electrode. According to the design, in the region where the above 15 LED sub-chips are to be fabricated, the first LED sub-chip in each column together form...

Embodiment 3

[0061] In this embodiment, a kind of LED chip is made, and the specific manufacturing process is as follows:

[0062] On a 2-inch substrate, 15 LED sub-chips to be fabricated are produced by yellow light, evaporation, and cleaning. These to-be-produced areas are divided into 3 columns from left to right, and each column includes 5 to-be-produced areas;

[0063] According to the flip-chip process, the regions to be fabricated of the P electrodes and the N electrodes are formed on the regions to be fabricated of the above-mentioned 15 LED sub-chips. In this process, two preliminary core particles are formed in each of the 15 regions to be fabricated. Specifically, two N-electrode grooves are formed at both ends of each region, and two N-electrode grooves are formed in the two N-electrode grooves. 1 P-type groove, and then form the electrode to be made into the substrate;

[0064] A mask layer covering the entire substrate is formed on the above-mentioned electrode substrate to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an LED chip and a manufacturing method thereof. The LED chip comprises a plurality of an LED sub-chips. Electrodes of the different LED sub-chips in the LED chip are connected in series or in parallel. Different from a high-power LED chip obtained by carrying out routing and packaging on bonding pads of a plurality of formed sub-chips in the later stage, the LED chip is formed by directly connecting the electrodes of all the LED sub-chips. The LED chip is obtained by directly connecting the electrodes in the LED sub-chips, in the packaging process of the later stage, the complicated routing working procedure is not needed, the packaging working procedure can be simplified greatly, and the reliability of the LED chip can be improved; meanwhile, as the electrodes in all the LED sub-chips are connected, the bounding pads originally located on the electrodes of the LED sub-chips can be removed, correspondingly, the area shaded by the bonding pads and connecting of the bonding pads can be reduced, and the light-emitting strength of the chip can be improved.

Description

technical field [0001] The invention relates to the field of chip manufacturing, in particular to an LED chip and a manufacturing method thereof. Background technique [0002] With the vigorous development of the third-generation semiconductor technology, semiconductor lighting has become the focus of social development due to its advantages of energy saving, environmental protection, high brightness, and long life. GaN-based LED chips are the "power" of semiconductor lighting. In recent years, their performance has been greatly improved, and production costs have been continuously reduced, making outstanding contributions to the entry of semiconductor lighting into thousands of households. [0003] The traditional LED chip is a front-mounted structure, which emits light from the front. The front side of the LED chip with a positive mounting structure has a transparent conductive layer that can form an ohmic contact with the P-type GaN layer. The thicker the transparent con...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/48H01L33/62
CPCH01L25/0753H01L33/62H01L2933/0066
Inventor 田艳红马欢牛凤娟
Owner XIANGNENG HUALEI OPTOELECTRONICS