Unlock instant, AI-driven research and patent intelligence for your innovation.

Phase shift mask and resist pattern forming method using the phase shift mask

A technology of phase shift mask and resist pattern, which is applied in the field of phase shift mask and can solve the problems such as the increasing necessity of patterning

Active Publication Date: 2018-11-13
DAI NIPPON PRINTING CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As long as the resolution of the existing image display device can be patterned beyond the resolution limit of the exposure device, there will be no problem. However, in recent years, image display with an increased number of pixels and higher resolution has been desired. The need for patterning at a size lower than the resolution limit of conventional exposure devices for manufacturing image display devices is increasing due to the development of devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase shift mask and resist pattern forming method using the phase shift mask
  • Phase shift mask and resist pattern forming method using the phase shift mask
  • Phase shift mask and resist pattern forming method using the phase shift mask

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0053] [Phase shift mask]

[0054] figure 1 It is a partially cutaway end view showing the schematic configuration of the phase shift mask of the first embodiment, figure 2 It is a graph showing the light intensity of the transmitted light of the phase shift mask of the first embodiment, image 3 It is a partial plan view showing the schematic configuration of the phase shift mask of the first embodiment.

[0055] Such as figure 1 As shown, the phase shift mask 1A of the first embodiment includes: a transparent substrate 2A, a plurality of phase shift parts 3A provided on the transparent substrate 2A, and a plurality of non-phase shift parts arranged adjacent to each phase shift part 3A. shifting part 4A; and in the process of manufacturing image display devices such as liquid crystal display devices and organic EL display devices, the light used for exposure by using a large-scale exposure device equipped with an equal-magnification projection exposure optical system for ...

no. 2 Embodiment approach

[0106] [Phase shift mask]

[0107] A phase shift mask according to a second embodiment will be described with reference to the drawings.

[0108] Figure 7 It is a partially cutaway end view showing the schematic configuration of the phase shift mask of the second embodiment, Figure 8 It is a graph showing the light intensity of the transmitted light of the phase shift mask of the second embodiment, Figure 9 It is a partial plan view showing the schematic structure of the phase shift mask of 2nd Embodiment.

[0109] Such as Figure 7 As shown, the phase shift mask 1B of the second embodiment includes: a transparent substrate 2B, a plurality of phase shift parts 3B provided on the transparent substrate 2B, and a plurality of non-phase shift parts arranged adjacent to each phase shift part 3B. shift part 4B; and, like the phase shift mask 1A of the first embodiment, it is used in the process of manufacturing an image display device such as a liquid crystal display device o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

Provided are a phase shift mask and a method for forming a resist pattern using the phase shift mask capable of forming a prescribed resist pattern that has a size less than the resolution limit of an exposure device with a high degree of accuracy on a material to be processed such as a transparent substrate by using a conventional exposure device for manufacturing an image display device. The phase shift mask for forming a resist pattern with a design size less than the resolution limit of the exposure device is provided with: a transparent substrate; a phase shift portion for applying a prescribed phase difference to the exposure light from the exposure device; and a non-phase shift portion adjacent to the phase shift portion. At least either the phase shift portion or the non-phase shift portion has a size less than the resolution limit of the exposure device, and the sizes of the phase shift portion and the non-phase shift portion are mutually different. One side of a pattern region that includes the phase shift portion and the non-phase shift portion on the transparent substrate is 300 mm or more. A light shielding portion with a size less than the resolution limit of the exposure device is not included at least in the pattern region.

Description

technical field [0001] The present invention relates to a phase shift mask for forming a predetermined resist pattern on a workpiece and a resist pattern forming method using the phase shift mask. Background technique [0002] A liquid crystal display generally has the following structure: a TFT substrate having switching active elements (thin film transistors (TFT, Thin Film Transistor)) for driving pixel electrodes, a black matrix including a predetermined opening, and a black matrix formed in the opening. The color filter substrates of the colored layers on the part are arranged facing each other, the surroundings are sealed, and liquid crystal materials are sealed and filled in the gaps. [0003] In this liquid crystal display, TFT etc. on a TFT substrate can be formed by operating on a transparent substrate on which a thin film containing these (gate electrode, source electrode, drain electrode, etc.) constituent materials is formed. A photoresist film having a predete...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/34G03F7/20
CPCG03F1/34
Inventor 木下一树飞田敦
Owner DAI NIPPON PRINTING CO LTD