Method for producing a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chips

Abstract

The invention proposes a method for producing a plurality of optoelectronic semiconductor chips (1), in which a layer composite (10) is provided which has a main plane (3) and a semiconductor layer sequence (2), the main A plane delimits the layer composite (10) in the vertical direction, the semiconductor layer sequence having an active region (20) provided for generating and / or detecting radiation, wherein multiple layers are formed in the layer composite (10) A recess (31) extending from the main plane (3) in a direction towards the active region (20). The planarization layer is formed on the main plane (3) such that the recesses are at least partially filled with the material of the planarization layer (6). Material of the planarization layer (6) is at least partially removed to planarize the planarization layer. A semiconductor chip (1) is produced, wherein for the semiconductor chip (1) at least one semiconductor body (200) is produced from the semiconductor layer sequence (2). Furthermore, the invention proposes an optoelectronic semiconductor chip.

Description

technical field [0001] The present application relates to a method for producing a plurality of optoelectronic semiconductor chips and to an optoelectronic semiconductor chip. Background technique [0002] For optoelectronic semiconductor components, such as light-emitting diode chips, multiple layers arranged one above the other and structured, for example for electrical contacting devices, are often required. The structuring of the layers can result in relatively steep steps or edges having to be covered by subsequent layers. At such locations there is the risk that these locations are not sufficiently coated at every location during deposition of the layers, which can lead, for example, to an electrical short circuit between two layers to be electrically insulated from one another. Contents of the invention [0003] The object of the present invention is to provide a method for producing an optoelectronic semiconductor chip, by means of which the semiconductor chip can...

AI Technical Summary

Problems solved by technology

At such points there is the danger that these points are not sufficiently coated at every point when depositing the layers, which can lead, for example, to an electrical short circuit between two layers to be electrically insulated from one another.

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