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Semiconductor laser apparatus and method for manufacturing same

By using a combination of conductive adhesive and heat dissipation components in the semiconductor laser device, the problem of the solder layer protruding from the laser during welding is solved, the heat dissipation efficiency is improved, and the laser output with high output and high reliability is ensured.

Active Publication Date: 2014-09-10
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this state, the semiconductor laser element 101 may be damaged if sufficient heat dissipation is not performed.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0041] figure 1 It is a plan view of the semiconductor laser device 10 according to this embodiment. figure 2 is the semiconductor laser device 10 according to this embodiment, and is figure 1 A cross-sectional view of the 2-2 lines. image 3 is the semiconductor laser device 10 according to this embodiment, and is figure 1 A sectional view of the 3-3 line. Figure 4 is a cross-sectional view of the semiconductor laser device 10 according to this embodiment, and is figure 2 A magnified view of the dotted line portion of . Figure 5 is a cross-sectional view of the semiconductor laser device 10 according to this embodiment, and is image 3 A magnified view of the dotted line portion of .

[0042] Such as Figure 1~3 As shown, the semiconductor laser device 10 of this embodiment includes: a semiconductor laser element 11; a solder layer 12 as a conductive first adhesive; and a submount 13 as a conductive first heat sink. Furthermore, the semiconductor laser device 1...

Deformed example 1

[0060] Figure 7 It is a cross-sectional view illustrating Modification 1 of the side surface of the semiconductor laser device 10 according to the present embodiment from which laser light is emitted.

[0061] Such as Figure 7 As shown, the laser emitting side of the semiconductor laser element 11 is located inside the side of the submount 13 . That is, the side surface from which the semiconductor laser element 11 emits laser light is located closer to the center of the submount 13 than the side surface of the submount 13 . Thereby, the solder layer 12 can be formed to more reliably fill the space between the semiconductor laser element 11 and the submount 13 on the side surface where the laser light is emitted, and heat dissipation can be improved.

[0062] The distance between the side surface of the semiconductor laser element 11 that emits laser light and the side surface of the submount 13 in plan view is preferably 5 μm or less. This prevents laser light emitted fr...

Deformed example 2

[0064] Figure 8 It is a cross-sectional view illustrating Modification 2 of the side surface of the semiconductor laser device 10 according to the present embodiment from which laser light is emitted.

[0065] Such as Figure 8 As shown, the laser emitting side of the semiconductor laser element 11 is located outside the side of the submount 13 . That is, the side surface of the semiconductor laser element 11 that emits laser light is located farther from the center of the submount 13 than the side surface of the submount 13 . Thus, it is possible to reliably prevent laser light emitted from the semiconductor laser element 11 from being obstructed by the solder layer 12 .

[0066] The distance between the side surface of the semiconductor laser element 11 that emits laser light and the side surface of the submount 13 in plan view is preferably 10 μm or less, more preferably 5 μm or less. Accordingly, sufficient heat dissipation from the semiconductor laser element 11 to th...

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PUM

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Abstract

This semiconductor laser apparatus has a conductive heat dissipating member, a conductive first adhesive, and a semiconductor laser element. The first adhesive is provided on the heat dissipating member, and the semiconductor laser element is provided on the first adhesive. Under the emitter end surface portion of the semiconductor laser element, said emitter end surface portion having laser light emitted therefrom, the first adhesive reaches a portion on the side surface of the heat dissipating member. Consequently, heat dissipating characteristics of the semiconductor laser element can be further improved, and laser light emitted from the semiconductor laser element can be efficiently extracted.

Description

technical field [0001] The present invention relates to a high-output semiconductor laser device used as a light source in welding, bonding, cutting, etc. in the field of industrial application, and its manufacturing method. Background technique [0002] In recent years, the high output of semiconductor laser devices has progressed remarkably, and semiconductor laser devices are expected as light sources of equipment used in processes such as welding, joining, and cutting in the field of industrial applications. [0003] Semiconductor laser devices are suitable for compact light sources of the tens of W class because of their small size and high efficiency, and the ability to simultaneously produce many elements from a semiconductor wafer. As a light source of such a tens of W class high-output laser, an array-type semiconductor laser device or a configuration in which a plurality of single-piece semiconductor laser devices are combined is used. An array-type semiconductor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/022H01S5/02375
CPCH01S5/02469H01S5/02272H01S5/02492H01S5/2231H01S5/028H01S5/02461H01S5/02268H01L24/32H01L2224/29111H01L2224/29144H01L2224/2612H01S5/0236H01S5/02375H01S5/0237H01L24/29
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD