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Wafer cleaning method and wafer cleaning device

A wafer and deionized water technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as affecting device yield and easy formation of defects on the edge of wafers, avoiding coating and preventing defects from forming. Effect

Active Publication Date: 2017-06-27
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the actual production process, it is found that defects are easily formed at the edge of the wafer, which affects the yield of the device

Method used

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  • Wafer cleaning method and wafer cleaning device
  • Wafer cleaning method and wafer cleaning device
  • Wafer cleaning method and wafer cleaning device

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Embodiment Construction

[0029] The wafer cleaning method and wafer cleaning device proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0030] It has been mentioned in the background technology that when the mixture of cold water (below 10 degrees) and engraving copper solution is sprayed onto the edge surface of the wafer, there will be a copper area 30 (such as figure 1 As shown), the defect 31 is easily formed at the place. After long-term research by the inventors of the present application, it has been found that the defect 31 occurs because the temperature of the mixture of cold...

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Abstract

The invention provides a wafer cleaning method and a wafer cleaning device. The method comprises the step of providing deionized water with heat. Heat generated by mixing the deionized water and an etching copper solution and the heat of the deionized water can improve the etching efficiency of the etching copper solution on a copper layer on the surface of the edge of a wafer, so that the copper layer on the surface of the edge of the wafer can be removed rapidly, long-time coating of the etching copper solution is avoided, and the etching copper solution can be effectively prevented from sputtering to a central copper area of the wafer to form a defect.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a wafer cleaning method and a wafer cleaning device. Background technique [0002] In the manufacturing process of integrated circuits, some of the processes require copper plating on the surface of the wafer, such as the process of making copper interconnection lines. However, the mark originally exposed on the edge of the wafer after the copper plating layer is also covered by the copper layer and cannot be identified. Grinding the copper layer on the edge of the wafer also prevents the markings on the edge of the wafer from being exposed, which makes it impossible to distinguish between different wafers. [0003] Therefore, the edge of the wafer needs to be cleaned to remove the copper layer that hides the marking on the wafer. Usually, the edge of the wafer is cleaned with a mixture of cold water and copper etching solution with a temperature lower than 10 degrees...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3213
CPCH01L21/02074H01L21/67023
Inventor 李广宁沈哲敏
Owner SEMICON MFG INT (SHANGHAI) CORP