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Static protection structure and static protection circuit

A technology for electrostatic protection and power supply, applied in circuits, electrical components, electric solid devices, etc., can solve the problem of low discharge efficiency of ESD protection circuits, and achieve the effect of improving efficiency and strengthening control capabilities.

Active Publication Date: 2016-12-28
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Existing ESD protection circuits have low discharge efficiency when discharging

Method used

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  • Static protection structure and static protection circuit
  • Static protection structure and static protection circuit
  • Static protection structure and static protection circuit

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Embodiment Construction

[0034] The existing electrostatic protection circuit uses a parasitic NPN transistor 17 (reference figure 2 ) Discharge, there is only one discharge path, and when the parasitic NPN transistor is turned on and discharged, it is passively triggered, that is, when the electrostatic charge is required to accumulate a certain amount of electrostatic charge at the input and output interface terminal 15, the current flows from the drain region 102 through the well region resistor 18 to The P-type doped region 105 creates a potential difference between the P-well region at the bottom of the gate 103 and the ground terminal 16. When the potential difference is greater than the threshold voltage of the parasitic NPN transistor 17, the electrostatic charge accumulated in the input and output interface terminal 15 is released, As a result, the efficiency of electrostatic discharge of the existing electrostatic protection circuit is relatively low.

[0035] In order to solve the above proble...

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Abstract

An electrostatic protection structure and an electrostatic protection circuit, the electrostatic protection structure includes: a PMOS transistor located in the first region of the first N-type well region, the source region and the gate of the PMOS transistor are connected to the power supply terminal, and the PMOS transistor The drain region of the drain region is connected to the input and output interface; the first base doped region located in the second region of the first N-type well region is connected to the phase of the external trigger voltage adjustment circuit; The NMOS transistor in the third area of ​​the first P-type well region, the drain region of the NMOS transistor is connected to the input and output interface end, and the gate and source region of the NMOS transistor are connected to the ground terminal; The second base doped region in the fourth region is connected with the external trigger voltage adjustment circuit. The electrostatic discharge paths of the electrostatic protection structure are increased, and the efficiency of electrostatic discharge is improved.

Description

Technical field [0001] The invention relates to the field of electrostatic protection, in particular to an electrostatic protection structure and an electrostatic protection circuit. Background technique [0002] In the production and application of integrated circuit chips, with the continuous improvement of VLSI process technology, the current CMOS integrated circuit manufacturing technology has entered the deep sub-micron stage, the size of MOS devices has been shrinking, and the thickness of the gate oxide layer has increased. The thinner the MOS device is, the withstand voltage capability of the MOS device is significantly reduced, and the harm of electrostatic discharge (Electrostatic Discharge, ESD) to integrated circuits becomes more and more significant. Therefore, ESD protection of integrated circuits has become particularly important. [0003] In order to strengthen the protection against static electricity, most of the chip’s input and output interface (I / O pad) are co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
Inventor 欧阳雄翁文君程惠娟陈捷李宏伟
Owner SEMICON MFG INT (SHANGHAI) CORP
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