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Backside illuminated CMOS image sensor and manufacturing method thereof

A technology of an image sensor and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, radiation control devices, electrical components, etc., can solve the problems of easy generation of dark current or white point, affecting imaging quality, etc., and reduce dark current or white point. , the effect of improving image quality and reliability

Active Publication Date: 2014-10-01
OMNIVISION TECH (SHANGHAI) CO LTD
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a back-illuminated CMOS image sensor and its manufacturing method, to solve the problem that the back-illuminated CMOS image sensor is prone to dark current or white spots, which affects the imaging quality

Method used

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  • Backside illuminated CMOS image sensor and manufacturing method thereof
  • Backside illuminated CMOS image sensor and manufacturing method thereof
  • Backside illuminated CMOS image sensor and manufacturing method thereof

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Embodiment Construction

[0025] The back-illuminated CMOS image sensor of the present invention and its manufacturing method will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described herein while still The advantageous effects of the present invention are realized. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0026] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the de...

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Abstract

The invention discloses a backside illuminated CMOS image sensor and a manufacturing method of the sensor. The method includes the steps of forming a CMOS device through the front end process, forming a BPSG film on the CMOS device and carrying out thermal processing. The CMOS image sensor obtained in the method can effectively reduce generation of dark currents and white dots and reliability of the sensor is improved.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a back-illuminated CMOS image sensor and a manufacturing method thereof. Background technique [0002] The image sensor is developed on the basis of photoelectric technology. The so-called image sensor is a sensor that can sense optical image information and convert it into a usable output signal. Image sensors can improve the visual range of the human eye, enabling people to see the microcosm and macrocosm that cannot be seen by the naked eye, see what happens in places that people cannot reach temporarily, and see various physical and chemical changes beyond the visual range of the naked eye. Life, physiology, the occurrence and development of disease, and so on. It can be seen that image sensors play a very important role in people's culture, sports, production, life and scientific research. It can be said that modern human activities can no longer be separated from im...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/8238
Inventor 刘远良李全宝
Owner OMNIVISION TECH (SHANGHAI) CO LTD
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