Fin field effect transistor and method of forming the same

Abstract

The invention provides a finned field effect transistor and a manufacturing method thereof. The manufacturing method of the finned field effect transistor comprises the steps as follows: a semiconductor substrate is provided, wherein a projecting fin part is arranged on the semiconductor substrate, a plurality of discrete gate structures are arranged on the sidewalls and the top surface of the fin part, and sidewalls are formed on the surfaces of the sidewalls of the gate structures; a dielectric layer for covering the fin part, the gate structures, the sidewalls and the semiconductor substrate is formed, wherein the surface of the dielectric layer is higher than the top surface of each gate structure; a patterned mask layer is formed on the dielectric layer; the dielectric layer is etched to form first openings which exposes the surface of the fin part and the sidewall surfaces between the adjacent gate structures; the fin part exposed between the adjacent gate structures are etched along the first openings so that a groove is formed in the fin part; the groove is full of a stress material so that a shared source / drain region can be formed; the first openings are full of a first metal and a metal bolt is formed on the shared source / drain region. The process steps of the method are reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] MOS transistors generate switching signals by regulating the current through the channel region by applying a voltage to the gate. However, when the semiconductor technology enters the node below 45 nanometers, the control ability of the traditional planar MOS transistor on the channel current becomes weak, causing serious leakage current. Fin Field Effect Transistor (Fin FET) is an emerging multi-gate device, which generally includes a semiconductor fin with a high aspect ratio, a gate structure covering part of the top and side walls of the fin, and a gate structure located on the gate Source and drain regions in the fins on both sides of the pole structure. [0003] Figure 1 to Figure 5 It is a structural schematic diagram of the formation process of the existing fin field ef...

AI Technical Summary

Problems solved by technology

[0009] The formation process of the existing fin field effect transistor is relatively complicated

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