Electrode structure of substrate-free LED chip

Abstract

The invention provides an electrode structure of a substrate-free LED chip. The electrode structure comprises an N-type semiconductor layer, a light-emitting layer laminated on the N-type semiconductor layer, a P-type semiconductor layer laminated on the light-emitting layer, an N-type electrode in electrical contact with the N-type semiconductor layer, and a P-type electrode in electrical contact with the P-type semiconductor layer. The faces on the two sides of the N-type semiconductor layer and the P-type semiconductor layer serve as light-emitting faces of the chip, the remaining faces located on the lateral sides of the light-emitting faces serve as the lateral faces of the chip, at least one of the N-type electrode and the P-type electrode is arranged on the lateral face of the chip, and an insulating layer is arranged between the electrode on the lateral face and the lateral face of the chip. According to the electrode structure, the electrode is arranged on the lateral face of the chip, the light-emitting area of the chip is enlarged, and luminance of the chip is improved.

Description

technical field [0001] The invention relates to an LED chip structure, in particular to a structure for electrode arrangement on the LED chip. Background technique [0002] According to the different conductive properties of the substrate, the existing LED chips are generally divided into non-conductive substrate chips and conductive substrate chips. Silicon substrates, silicon substrates and gallium nitride substrate chips, etc., are also called vertical structure chips or single-electrode chips. The P-type electrode of the front-mounted chip can be directly fabricated on the P-type semiconductor layer, but because the sapphire substrate carrying the N-type semiconductor layer does not have a conductive function, when making the N-type electrode, it is necessary to cut out some areas on the P-type semiconductor surface until the N-type semiconductor layer is exposed, and then make an N-type electrode on the exposed N-type semiconductor layer. Calculated on a chip with a s...

AI Technical Summary

Problems solved by technology

It can be seen that the existing LED chips need to make electrodes on the light-emitting surface, which shields the light-emitting area of ​​the chip to varying degrees, cannot fully utilize the entire light-emitting area of ​​the chip, and has low internal quantum efficiency.

At the same time, since a large amount of light is reflected back into the chip, the heat accumulation in the chip will also accelerate the attenuation speed of the chip and reduce the service life of the chip

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