Method for manufacturing organic el device and organic el device
A manufacturing method and component technology, which can be used in semiconductor/solid-state device manufacturing, electrical components, final product manufacturing, etc., and can solve problems such as deterioration of light-emitting properties of organic EL components
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Embodiment 1
[0085] As a strip-shaped metal substrate, a width of 30 mm, a length of 140 m, a thickness of 50 μm, a surface roughness (Ra) of 40 nm in the longitudinal direction of the substrate, and a surface roughness (Ra) of the width direction of the substrate were used. ) is a roll-shaped flexible SUS substrate of 55 nm. That is, in Example 1, the surface roughness of the substrate in the longitudinal direction was smaller than that in the width direction. An insulating layer having a thickness of 3 μm was formed by applying an acrylic resin (manufactured by JSR Corporation, trade name “JEM-477”) to one side of the substrate using a coating device. This laminated body of the base material and the insulating layer was wound up on a supply roll (not shown). In addition, as the pattern of the first electrode layer, the organic layer, the second electrode layer, and the sealing layer, a figure 2 pattern shown.
[0086]Then, the above-mentioned laminate wound up into a roll shape was c...
Embodiment 2
[0089] In addition to being used as the pattern of the first electrode layer 23, the organic layer 25, the second electrode layer 27 and the sealing layer 29 Figure 4 Except for the pattern shown, the organic EL element 20 of Example 2 was produced in the same manner as in Example 1 (see Figure 5 ).
Embodiment 3
[0091] Among the organic layers, a LiF layer with a thickness of 0.5 nm was sequentially heated and deposited as an electron injection layer, an Alq3 layer with a thickness of 45 nm was used as a light-emitting layer and an electron transport layer, and NPB with a thickness of 50 nm was used as a hole transport layer. CuPc as hole injection layer. Furthermore, an ITO layer (cathode layer) having a thickness of 50 nm was formed as a second electrode layer by sputtering. Thereafter, SiOCN was evaporated to a thickness of 400 nm as a sealing layer by plasma-assisted evaporation. Other than that, it is the same as in Example 1. Additionally, using figure 2 The pattern shown, obtained the organic EL element 20 of embodiment 3 (length 80mm * width 30mm) (refer to image 3 ).
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