Heated humidity sensor for radiosonde and its preparation method and a humidity detection circuit
一种湿度传感器、加热式的技术,应用在仪器、科学仪器、测量装置等方向,能够解决电路板分布电容测量结果有影响、湿度传感器易结露、湿度波动大等问题,达到抑制零点漂移、抑制温度漂移、解决结露的效果
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specific Embodiment approach 1
[0039] Specific implementation mode one: combine figure 1 Describe this embodiment mode, the heating type humidity sensor for sonde described in this embodiment mode, it comprises base 1, first insulating layer 2, serpentine heater electrode 8, second insulating layer 9, lower electrode 10, sensor A wet layer 11 and a porous upper electrode 12; wherein, the upper surface of the substrate 1 is laid with a first insulating layer 2; the upper surface of the first insulating layer 2 is provided with a serpentine heater electrode 8;
[0040] The serpentine heater electrode 8 includes a first heater pad 5, a second heater pad 6, a first extraction electrode, a first part of the serpentine electrode, a second part of the serpentine electrode, a third part of the serpentine electrode and the second lead-out electrode;
[0041] One end of the first lead-out electrode is connected to the head end of the first part of the serpentine electrode, the end of the first part of the serpentine...
specific Embodiment approach 2
[0077] Specific embodiment two: this embodiment is the preparation method of the heating type humidity sensor described in specific embodiment one for sonde, and described method comprises the following steps:
[0078] Step 1: preparing the substrate 1 of the sensor, and cleaning the prepared substrate 1 with deionized water;
[0079] Step 2: Oxidize the surface of the substrate 1 prepared in step 1 to form a dense layer of SiO 2 , as the first insulating layer 2;
[0080] Step 3: Obtain the upper surface of the insulating layer in step 2, and prepare the serpentine heater electrode 8 by photolithography and magnetron sputtering;
[0081] Step 4: Prepare Al on the upper surface of the serpentine heater electrode 8 prepared in Step 3 by radio frequency sputtering 2 o 3 protective layer, as the second insulating layer 9;
[0082] Step 5: Prepare the lower electrode 10 on the upper surface of the second insulating layer 9 by photolithography and magnetron sputtering;
[0083...
specific Embodiment approach 3
[0086] Specific embodiment three: this embodiment is a further limitation on the preparation method of the heating humidity sensor for radiosondes described in specific embodiment two. In step one, the substrate 1 is a single crystal with a thickness of 400 μm and a crystal orientation of 100 silicon;
[0087] In step 2, the thickness of the insulating layer is 500nm-1000nm.
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