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Integrated circuits and methods for fabricating integrated circuits with cladded non-planar transistor structures

An integrated circuit and non-planar technology, which is applied in the field of integrated circuits and used in the manufacture of integrated circuits, and can solve problems such as the adverse effects of non-uniform rhomboid cladding layers on device performance

Inactive Publication Date: 2014-12-17
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Non-uniformity in the thickness of the rhomboid cladding can adversely affect device performance

Method used

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  • Integrated circuits and methods for fabricating integrated circuits with cladded non-planar transistor structures
  • Integrated circuits and methods for fabricating integrated circuits with cladded non-planar transistor structures
  • Integrated circuits and methods for fabricating integrated circuits with cladded non-planar transistor structures

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Embodiment Construction

[0038] The following embodiments are merely examples in nature and are not intended to be limiting of the various embodiments of the integrated circuits or methods for fabricating integrated circuits claimed herein. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background or description of the invention, or the following detailed description.

[0039] The integrated circuits and methods for fabricating integrated circuits with clad non-planar transistor structures described herein avoid the problems faced by conventional planar structure processes when applied to non-planar structures. For example, the integrated circuits and methods for fabricating integrated circuits described herein avoid the formation of facets and non-uniform cladding over non-planar transistor structures. In particular, for conventionally oriented semiconductor substrates, it has been observed that epitaxial deposition of cla...

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Abstract

In an exemplary embodiment, a method for fabricating integrated circuits includes providing a semiconductor substrate. The method etches the semiconductor substrate to form a non-planar transistor structure having sidewalls. On a standard (100) <110> substrate the fin sidewalls have (110) surface plane if the fins are aligned or perpendicular with the <110> wafer notch. The method includes depositing a sacrificial liner along the sidewalls of the non-planar transistor structure. Further, a confining material is deposited overlying the semiconductor substrate and adjacent the sacrificial liner. The method includes removing at least a portion of the sacrificial liner and forming a void between the sidewalls of the non-planar transistor structure and the confining material. A cladding layer is epitaxially grown in the void. Since the sidewall growth is limited by the confining material, a cladding layer of uniform thickness is enabled on fins with (110) sidewall and (100) top surface.

Description

technical field [0001] The technical field of the invention relates generally to integrated circuits and methods for making integrated circuits, and more particularly to integrated circuits and methods for making semiconductor devices having non-planar transistor structures and cladding layers overlying the non-planar transistor structures. integrated circuit method. Background technique [0002] In contrast to conventional planar metal oxide semiconductor field effect transistors (MOSFETs), multi-gate transistors incorporate two or more gates into a single device. Compared with single-gate transistors, multi-gate transistors reduce off-state leakage current, increase on-state current, and reduce overall power consumption. Multi-gate devices with non-planar topography also tend to be more compact than conventional planar transistors, enabling higher device densities. [0003] One known type of non-planar, multi-gate transistor commonly referred to as a "fin field effect tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/822H01L27/105
CPCH01L29/66795H01L29/785
Inventor K·M·阿卡瓦尔达A·P·雅各布
Owner GLOBALFOUNDRIES INC