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METHOD FOR ELECTRICAL ACTIVATION OF DOPANT SPECIES IN A GaN FILM

A dopant and electrical activation technology, applied in the field of electrical activation, can solve the problems of limiting the electrical activation of dopants, reducing the time period or temperature of activation heat treatment, and achieving the effect of increasing the activation heat budget and improving the bonding mechanical strength

Inactive Publication Date: 2015-01-14
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

To minimize the occurrence of these disadvantages, the time period or temperature of the activation heat treatment is reduced, thereby limiting the electrical activation of the dopant

Method used

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  • METHOD FOR ELECTRICAL ACTIVATION OF DOPANT SPECIES IN A GaN FILM
  • METHOD FOR ELECTRICAL ACTIVATION OF DOPANT SPECIES IN A GaN FILM
  • METHOD FOR ELECTRICAL ACTIVATION OF DOPANT SPECIES IN A GaN FILM

Examples

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Embodiment Construction

[0045] figure 1 The first step of the method is shown, which consists in providing a stack 1 comprising a support substrate 2 and a GaN film 3 (step a). The support substrate 2 is a bulk substrate made of sapphire, and the single crystal GaN film 3 is epitaxially deposited to a thickness of about 1 micrometer on the support substrate 2 (step i). Epitaxial growth of a buffer layer (typically a buffer layer) in, for example, AlGaN (e.g., 1 μm thickness) can be provided prior to GaN epitaxial growth to facilitate control of lattice parameter differences and thus improve the impact of subsequently formed electronic components or devices. wear voltage. Then, before proceeding to the step of implanting dopant species, an optional surface preparation step, such as NH 4 OH / H 2 The step of cleaning O solution at 60°C or with a dilute solution of HF, or the step of deoxidizing the GaN surface. A protective layer 4 is then deposited on the surface of the GaN film 3 to limit the occu...

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Abstract

The method includes the steps of a) Providing a stack having a support substrate and a film of GaN having dopant species, b) Directly bonding a shielding layer having a thickness higher than 2 micrometers to the surface of the film of GaN, so as to form an activation structure, and c) Applying a thermal budget to the activation structure according to conditions allowing to electrically activate at least one portion of the dopant species.

Description

technical field [0001] The present invention relates to methods for the electrical activation of dopant species in GaN films. Background technique [0002] GaN is a semiconductor material with a large band gap. Therefore, it is advantageously used in the fields of optoelectronics (LEDs) and high electron mobility transistors (HEMTs). Its bandgap value (3.43eV to 300K), its high critical magnetic field (3.3.10 6 V.cm -1 ) and its high electron mobility (3.10 7 cm.s -1 ) makes GaN a very promising material for applications in high-power microelectronics. However, some critical steps in the preparation of the material, such as doping by implantation, must still be controlled. In fact, GaN is a material sensitive to thermal treatments performed at high temperatures, such as those requiring electrical activation of implanted dopants. In particular, this thermal instability is related to the fact that nitrogen molecules evaporate from GaN and cause the material to decompose...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/3245H01L21/2258H01L33/0095H01L21/26546H01L21/02H01L29/66878H01L33/0062
Inventor 克莱尔·阿格拉费伊
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES