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Light emitting device

A technology of light-emitting devices and light-emitting structures, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the light efficiency of light-emitting devices, and achieve the effect of improving compatibility and diffusion

Active Publication Date: 2018-07-27
SUZHOU LEKIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] For this reason, the diffusion of holes is reduced due to the bottleneck of hole movement, thus reducing the light efficiency of light-emitting devices

Method used

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Examples

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Embodiment Construction

[0019] In the description of the embodiments, it should be understood that when a layer (or film), region, pattern or structure is referred to as being on another substrate, another layer (or film), another region, another substrate or another When a pattern is "on" or "under" it may be "directly" or "indirectly" on other substrates, layers (or films), regions, substrates or patterns, or there may be one or more intervening layers . The location of such layers is described with reference to the drawings.

[0020] Hereinafter, embodiments will be described with reference to the accompanying drawings. The thickness or size of each layer shown in the drawings may be exaggerated, omitted, or schematically drawn for convenience or clarity. Also, the size of elements does not utterly reflect an actual size.

[0021] figure 1 is a plan view showing the light emitting device according to the embodiment. figure 2 is along figure 1 A cross-sectional view taken along line A-A.

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PUM

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Abstract

The invention discloses a light emitting device. The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a plurality of first electrodes, disposed below the light emitting structure and electrically connected to the first conductive semiconductor layer through the second conductive semiconductor layer, the active layer, and a part of the first conductive semiconductor layer; a second electrode, arranged under the light emitting structure to be electrically connected to the second conductive semiconductor layer; a first insulating layer arranged around the first electrode to insulate the first electrode from the second electrode; a bonding layer through the electrically connected to the second electrode through the first electrode and the first insulating layer; and a second insulating layer surrounding the bonding layer. The diffusion of holes of the light emitting device is improved, so that the efficiency of the light emitting device can be increased.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2013-0081451 (filed Jul. 11, 2013), the entirety of which is hereby incorporated by reference. technical field [0003] This embodiment relates to a light emitting device, in particular to a lighting device for improving luminous efficiency. Background technique [0004] III-V nitride semiconductors have been widely used as main materials for light-emitting devices such as light-emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. In general, III-V nitride semiconductors include compounds with the composition formula In x Al y Ga 1-x-y N (0≤x≤1, 0≤y≤1, and 0≤x+y≤1) semiconductor material. [0005] LEDs are semiconductor devices that transmit / receive signals by converting electrical signals into infrared rays or light using the properties of compound semiconductors. LEDs are also used as light sources. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38
CPCH01L33/38H01L33/382H01L33/387H01L33/22H01L33/32H01L33/405H01L33/44H01L33/0093H01L33/36H01L33/0012H01L33/0066H01L33/0075H01L33/06H01L33/30H01L33/42H01L33/62H01L2933/0016H01L2933/0066
Inventor 文智炯
Owner SUZHOU LEKIN SEMICON CO LTD