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Method for preparing voltage dependent resistor

A varistor, square chip technology, applied in varistor, varistor core, resistor manufacturing, etc., can solve the problem of SPD needing to be checked and replaced regularly

Inactive Publication Date: 2015-01-28
SHAANXI EYOUNG TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, surge protectors (SPDs) made of square pieces made of ZnO varistor materials have been widely used in power protection. , SPDs in practical applications need to be checked and replaced regularly

Method used

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Examples

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Embodiment Construction

[0010] A preparation method of a piezoresistor, comprising the steps of: (1) selecting MgO with a purity of 99.5% and SiO with a purity of 99% 2, According to the molar ratio of 1:1 mixed ball milling, drying after ball milling; (2) pressed into discs at 60 MPa, synthesized at 750 ° C, crushed after natural cooling; (3) 90.4% ZnO + 5.18 % Bi 2 o 3 + 1.84% Sb 2 o 3 + 0.97%Co 2 o 3 + 0. 84% Ni 2 o 3 + 0.64% Cr 2 o 3 + 0.13% MnO 2 As a base, add 0.04% MgSiO 3 Prepare mixed raw materials; (4) Put the mixed raw materials, water, and balls in a polyester tank according to the ratio of 1:1:2.5, stir and grind for 1 h, add 8% binder after drying the slurry, and press it under 240 MPa to make 40 mm × 40 mm square slices were sintered.

[0011] In the method for preparing a varistor according to the present invention, the sintering temperature in the step (4) is 1160° C., and the time is 150 minutes. The thickness of the square sheet in the step (4) is 3.8 mm. The ...

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PUM

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Abstract

The invention discloses a method for preparing a voltage dependent resistor, belonging to the field of electronic element preparation. The method comprises the following steps: (1) mixing MgO with the purity of 99.5% and SiO2 with the purity of 99% in a mole ratio of 1:1, ball-milling, and drying after ball-milling; (2) pressing the components into round pieces at 60MPa, synthesizing at 750 DEG C, naturally cooling, and crushing for later use; (3) adopting 90.4% of ZnO, 5.18% of Bi2O3, 1.84% of Sb2O3, 0.97% of Co2O3, 0.84% of Ni2O3, 0.64% of Cr2O3 and 0.13% of MnO2 as base components, further adding 0.04% of MgSiO3, so as to prepare a mixed raw material; and (4) putting the mixed raw material, water and balls into a polyester tank at a ratio of 1:1:2.5, stirring and grinding for 1 hour, drying the slurry, adding 8% of an adhesive, pressing into square pieces of 40*40mm in width and length at 240MPa, and sintering. By adjusting the proportions of the raw materials and doping 0.04% of MgSiO3, not only is the electric nonlinearity property of a ZnO anti-lightning voltage dependent resistor greatly improved, but also the voltage gradient of the ZnO voltage dependent resistor is improved, the through-current capability of the ZnO voltage dependent resistor is greatly improved, and the residual pressure ratio and leakage current of the ZnO voltage dependent resistor are reduced.

Description

technical field [0001] The invention belongs to the field of electronic component preparation, and in particular relates to a method for preparing a piezoresistor. Background technique [0002] With the advancement of science and technology, more and more electronic products are used, and the use of electronic components also increases. With the improvement of the quality requirements of electronic products, the quality requirements of electronic components are also constantly improving. In the past Many component production processes can no longer meet the current product quality requirements for components. The earliest varistors were made of SiC materials. In 1969, Matsuoka et al. discovered ZnO varistors with varistor behavior after introducing doped ions. People's understanding and research on varistors began to make great progress. . In recent years, surge protectors (SPDs) made of square sheets made of ZnO varistor materials have been widely used in power su...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622H01C7/112H01C17/30
Inventor 张俊
Owner SHAANXI EYOUNG TECH
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