A Varistor with Low Residual Voltage Ratio and Its Application

A varistor, varistor technology, applied in the direction of varistor core, varistor, etc., can solve the problem of lowering, only a few ohms, circuit short circuit, etc., to achieve lower resistivity, leakage current The effect of reducing and increasing electrical conductivity

Inactive Publication Date: 2020-02-18
新昌县恩喜电器有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the varistor is not working, it has a high impedance relative to the electronic components to be protected, and it will not change the design circuit characteristics, but when the instantaneous surge voltage appears, the impedance of the varistor will become lower. Only a few ohms, causing a short circuit to protect electronic products or electronic components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Varistor with Low Residual Voltage Ratio and Its Application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] A varistor with a low residual voltage ratio is composed of a varistor chip, a silicone rubber sealing layer, an insulating sealing layer, an electrode and an electrode lead. The varistor chip is composed of the following substances by weight: vanadium-doped 80 parts of zinc oxide, 0.75 parts of bismuth trioxide, 2.02 parts of silicon dioxide, 0.45 parts of titanium dioxide, 0.42 parts of nickel sulfide, 0.1 parts of silicon carbide, 0.05 parts of zirconium nitride, 0.38 parts of antimony trioxide, yttrium trioxide 0.05 part and 1.0 part of calcium copper titanate, wherein the doping concentration of vanadium-doped zinc oxide is 0.5 at. %, and the crystal grain size is about 30 nanometers.

[0017] The varistor with low residual voltage ratio of the present invention is suitable for the overvoltage absorption of the rotor side of the generator and the overvoltage absorption of the DC side of the rectified excitation power supply, and is suitable for the altitude of less ...

Embodiment 2

[0019] A varistor with a low residual voltage ratio is composed of a varistor chip, a silicone rubber sealing layer, an insulating sealing layer, an electrode and an electrode lead. The varistor chip is composed of the following parts by weight: manganese, Nickel-doped zinc oxide 85 parts, bismuth trioxide 0.4 parts, silicon dioxide 2.46 parts, titanium dioxide 0.38 parts, nickel sulfide 0.4 parts, silicon carbide 0.15 parts, zirconium nitride 0.08 parts, antimony trioxide 0.48 parts, trioxide 0.05 part of yttrium and 1.2 parts of calcium copper titanate, wherein the doping concentration of vanadium-doped zinc oxide is 1.5 at. %, and the crystal grain size is about 50 nanometers.

[0020] The varistor with low residual voltage ratio of the present invention is suitable for the overvoltage absorption of the rotor side of the generator and the overvoltage absorption of the DC side of the rectified excitation power supply, and is suitable for the altitude of less than two kilomete...

Embodiment 3

[0022] A varistor with a low residual voltage ratio is composed of a varistor ceramic sheet and discontinuous electrodes. 0.6 part of bismuth, 1.8 part of silicon dioxide, 0.4 part of titanium dioxide, 0.45 part of nickel sulfide, 0.08 part of silicon carbide, 0.03 part of zirconium nitride, 0.06 part of yttrium trioxide, and 0.8 part of calcium copper titanate, among which vanadium doped oxide The doping concentration of zinc is 1.2 at. %, and the crystal grain size is about 20 nm.

[0023] The varistor with low residual voltage ratio of the present invention is suitable for the overvoltage absorption of the rotor side of the generator and the overvoltage absorption of the DC side of the rectified excitation power supply, and is suitable for the altitude of less than two kilometers, the atmospheric pressure of 86-106KPa, the environment Temperature -40 ~ +85 ℃ environment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
crystal sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a piezoresistor with a low residual voltage ratio and application of the piezoresistor. The piezoresistor with the low residual voltage ratio consists of a piezoresistor chip, a silicone rubber sealing layer, an insulated sealing layer, an electrode and an electrode lead wire. A zinc oxide material is doped, so that grain sizes of zinc oxide are refined, and surface density of a piezoresistor is increased, and therefore, the purpose of reducing the residual voltage ratio of the piezoresistor is achieved, current power impact resistance and a nonlinear coefficient of the piezoresistor are improved, so that the piezoresistor has relatively high voltage gradient.

Description

technical field [0001] The invention relates to the technical field of electronic components, in particular to a varistor with a low residual voltage ratio and an application thereof. Background technique [0002] The overvoltage protector is a product made of high-voltage and high-energy zinc oxide varistor elements as the core and made of different packaging structures. It is suitable for power, power electronics, electrical, electrical, telecommunications and other industries. The surge voltage impact of electronic equipment applies overvoltage protection. The varistor is a resistance element whose resistance changes nonlinearly with the applied voltage, that is, when the applied voltage exceeds a certain threshold voltage, its resistance changes rapidly. The resistor is a kind of electronic component whose own resistance is sensitive to applied voltage and can be used repeatedly without damage. It is also called "surge absorber". It is mainly used to protect electronic p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453H01C7/112H01C7/115H01C7/105H01C7/118
CPCC04B35/453C04B2235/3208C04B2235/3225C04B2235/3232C04B2235/3236C04B2235/3281C04B2235/3294C04B2235/3298C04B2235/3418C04B2235/3826C04B2235/3886C04B2235/446C04B2235/5454H01C7/105H01C7/112H01C7/115H01C7/118
Inventor 邱维军
Owner 新昌县恩喜电器有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products