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Multi-layer back electrode for a photovoltaic thin-film solar cell, use of the same for producing thin-film solar cells and modules, photovoltaic thin-film solar cells and modules containing the multi-layer back electrode and method for the production thereof
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A solar cell, back electrode layer technology, applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as high production costs, and achieve the effect of good quantum throughput
Inactive Publication Date: 2015-02-04
NICE SOLAR ENERGY GMBH
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[0004] While it is possible to achieve good efficiencies by using particularly pure back electrode materials, this is accompanied by often disproportionately high production costs
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[0048] exist figure 1 In the embodiment of the multilayer back electrode 1 according to the invention shown in , there is a bulk back electrode layer 4 made of molybdenum on a substrate layer 2 , for example a glass substrate. On the block back electrode layer 4 there is a bidirectionally acting conductive barrier layer 6 made of, for example, tungsten nitride or titanium nitride, and a metal chalcogenide such as molybdenum selenide adjacent to this layer. Ohmic contact layer 8a. In a preferred embodiment, the contact layer 8 a can also be doped with at least one dopant, for example sodium ions or sodium compounds, in particular sodium sulfite or sodium sulfide.
[0049] exist figure 2 In the second embodiment of the multilayer electrode 1 of the invention reproduced in figure 1 In different embodiments, the contact layer 8b is a metal layer, such as a molybdenum layer or a tungsten layer. In a preferred configuration, the contact layer 8 b can also be doped with at least...
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Abstract
The invention relates to a multi-layer back electrode for a photovoltaic thin-film solar cell, comprising, in this order, at least one bulk back electrode layer, containing or substantially consisting of V, Mn, Cr, Mo, Co, Zr, Ta, Nb and / or W and / or containing or substantially consisting of alloys containing V, Mn, Cr, Mo, Co, Zr, Fe, Ni, Al, Ta, Nb and / or W; at least one conductive barrier layer; at least one, in particular ohmic contact layer, containing or substantially consisting of Mo, W, Ta, Nb, Zr and / or Co, in particular Mo and / or W, and / or containing or substantially consisting of at least one metal chalcogenide, and / or containing at least one first layer, adjacent to the barrier layer, containing or substantially consisting of Mo, W, Ta, Nb, Zr and / or Co, in particular Mo and / or W, and at least one second layer which is non-adjacent to the barrier layer, containing or substantially consisting of at least one metal chalcogenide.
Description
technical field [0001] The invention relates to multilayer back electrodes for photovoltaic thin-film solar cells, the use of multilayer back electrodes for producing thin-film solar cells and thin-film solar modules, photovoltaic thin-film solar cells comprising a multilayer back electrode according to the invention and modules and methods for manufacturing photovoltaic thin-film solar cells and modules. Background technique [0002] Suitable photovoltaic solar cells include crystalline and amorphous silicon solar modules on the one hand and so-called thin-film solar modules on the other hand. In the latter case, IB-IIIA-VIA compound semiconductor layers, so-called chalcopyrite semiconductor absorber layers, are generally used. In these thin-film solar modules a molybdenum rear electrode layer is usually applied on a glass substrate. In a method variant, the molybdenum rear electrode layer is provided with copper and indium and optionally with a thin precursor metal layer...
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