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Antifuse one-time programmable memory cell and operation method of memory

An anti-fuse and characteristic technology, used in static memory, read-only memory, information storage, etc., can solve the problem of difficult judgment of reading data, reduce gate-induced drain leakage current, reduce programming current, improve The effect of reading characteristics

Active Publication Date: 2017-08-04
EMEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The formation positions of the conductive channels are randomly distributed, which makes it difficult to judge the read data

Method used

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  • Antifuse one-time programmable memory cell and operation method of memory
  • Antifuse one-time programmable memory cell and operation method of memory
  • Antifuse one-time programmable memory cell and operation method of memory

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Embodiment Construction

[0071] Figure 1A It is a top view of an antifuse memory cell according to an embodiment of the present invention. Please refer to Figure 1A , the memory cell 100 includes a well region 102, a selection gate 110, a first gate 112, a second gate 114, an insulating layer 116, a first doped region 104, a second doped region 106, and a third doped region 108 and a contact plug 120 , and the well region 102 includes an active region 118 . Wherein, the insulating layer 116 may be filled between the first gate 112 and the second gate 114 .

[0072] In terms of a further layout structure, the select gate 110 is completely formed on the active region 118 . The first gate 112 and the second gate 114 are partially formed on the active region 118 respectively. The first doped region 104 is located on a first side of the select gate 110 , and the second doped region 106 is located on a second side of the select gate 110 . From another point of view, the second doped region 106 is locat...

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Abstract

The invention discloses an anti-fuse one-time programmable memory cell and an operation method of the memory. The one-time programmable read-only memory cell includes: a first anti-fuse unit and a second anti-fuse unit, a selection transistor and a well area. The first antifuse unit and the second antifuse unit respectively include an antifuse layer and an antifuse gate sequentially disposed on the substrate. The selection transistor includes a selection gate, a gate dielectric layer, a first doped region and a second doped region. The select gate is disposed on the substrate. The gate dielectric layer is disposed between the select gate and the substrate. The first doped region and the second doped region are respectively disposed in the substrate on both sides of the select gate, wherein the second doped region is located in the substrate around the first antifuse unit and the second antifuse unit. The well region is arranged in the substrate under the first antifuse unit and the second antifuse unit, and is connected with the second doped region.

Description

technical field [0001] The invention relates to a memory and its operating method, in particular to an anti-fuse single-time programmable memory cell with improved reading characteristics and an operating method of the memory. Background technique [0002] Non-volatile memory is a memory that can continue to save the data in the memory after the power is cut off, and can be divided into read-only memory (ROM), one-time programmable memory (OTP memory) and repeatable memory. Read and write memory. In addition, with the maturity of semiconductor memory technology, the non-volatile memory can be integrated into a manufacturing process compatible with complementary metal oxide semiconductor (CMOS) devices. [0003] As for the one-time programmable memory mentioned above, it can be classified into fuse type and anti-fuse type. The fuse-type one-time programmable memory is a short circuit in an unprogrammed state, and an open circuit after programming. On the contrary, the anti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/112G11C17/16G11C17/18H10B69/00
Inventor 陈沁仪陈稐寯温岳嘉吴孟益陈信铭
Owner EMEMORY TECH INC
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