Solid-state imaging device, manufacturing method of the same, and electronic apparatus

A technology of a solid-state imaging device and a manufacturing method, which is applied in radiation control devices, televisions, circuits, etc., can solve problems such as difficulty in reading signal charges, and achieve the effect of improving reading characteristics
CN101853867AInactive Publication Date: 2010-10-06SONY CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SONY CORP
Publication Date
2010-10-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other.
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Description

technical field

[0001] The present invention relates to a solid-state imaging device, a method of manufacturing the same, and electronic equipment (such as a camera including the solid-state imaging device). Background technique

[0002] As a solid-state imaging device, an amplifying type solid-state imaging device is known, a representative example of which is a MOS image sensor such as a CMOS (Complementary Metal Oxide Semiconductor) image sensor. In addition, there is also known a charge transport type solid-state imaging device, a representative example of which is a CCD (Charge Coupled Device) image sensor. These solid-state imaging devices are widely used in digital still cameras, digital video cameras, and the like. In recent years, for solid-state imaging devices mounted on cellular phones with cameras or PDAs (Personal Digital Assistants), MOS image sensors are widely used due to low voltage, low power consumption, and the like.

[0003] In a MOS type solid-state ...

Claims

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